Focused on providing selective wet etchants for Logic and Memory.
Dummy gate Poly Si Removal
Technical challenges – No poly remain defect, and Epi pits free, low etch rate on oxide and SiN (<1 A/min), and less SiP film loss.
3D-NAND Selective SiNx Removal
Technical challenges – To selectively remove SiNx from the stack w/o damaging SiOx; high selective SiNx etch chemical is necessary. No Q-tip and oxide regrowth issue.
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