Ralph Dammel

Innovation is the art of the adjacent possible, arising from ideas colliding within fluid networks.

Perspective

I came to Merck KGaA, Darmstadt, Germany as part of our company's acquisition of AZ Electronic Materials in 2014. I had worked for AZ  since 1986 (although the company name changed several times in that period), and I was AZ's CTO at the time of the acquisition. My role has since expanded to encompass all of Merck KGaA, Darmstadt, Germany's Performance Materials activities, first as Chief Technologist, and now as a Research Fellow. In this function, I am looking for new fields for Performance Materials could enter and new products to develop, but another focus of my work has been to find synergies and new fields of application for the technology competencies from the acquisition with previously existing ones within Performance Materials. In particular, I believe that self-organization of chemical structures ("smart materials") is a topic that is quickly rising in importance as we are looking for ways to affordably manufacture nanoscale structures, both for integrated circuit nanolithography and other applications. Our company's broad mix of technological competencies puts us in a unique position to develop such smart materials and their applications, from the self-organization of liquid crystals to that of block copolymers. 

Innovation is the art of the adjacent possible, arising from ideas colliding within fluid networks. Over 30 years of working at the interface of high technology and chemistry has given me a wide range of background knowledge which enables me to contribute a high collision frequency to this process. Despite my long tenure in the industry, I have never ceased to be curious, and anything from a journal paper to a project presentation or a chance remark over lunch can set me on a path for a new idea.  

Innovation is the art of the adjacent possible, arising from ideas colliding within fluid networks.

Ralph Dammel

Research Fellow, Early Research and Business Development

Profile

Joined Merck KGaA, Darmstadt, Germany: 1986

Key research fields and topics:
Materials for semiconductor manufacture:

  • Photoresists from g-line to x-rays and e-beam
  • Top and bottom antireflective coatings
  • Shrink materials
  • Silicon-based polymers for IC manufacture
  • Block copolymers for directed self-assembly and other applications
  • Liquid crystal display technologies
  • Metamaterials and their applications 

Prizes and awards:

  • Silver Innovation Prize of German Industry (1986)
  • Elected SPIE Fellow in 2009 (The International Society of Optical Engineers (SPIE)
  • Outstanding Achievement Award in Photopolymer Science and Technology 2011 (Japanese Society of Photopolymer Science and Technology)
  • Frits Zernicke Award 2015 (SPIE)

 

CV & Scientific activities

References

Monographies

  • R. Dammel, “Diazonaphthoquinone-Based Resists”, SPIE Tutorial Texts TT11, SPIE Optical Engineering Press, Bellingham, WA 1993, 231 + IX pages, ISBN  0-8194-1019-5.

Journal Articles, Book Chapters and Proceedings:

  • J.N. Murrell, A.J. Stace and R. Dammel, "Computer Simulation of the Cage Effect in the Photodissociation of Iodine", J. Chem. Soc. Faraday Trans. II (1978), 1532-1539.
  • H. Bock, R. Dammel and L. Horner, "Die Pyrolyse von Methylazid", Chem. Ber. 114, 220-226 (1981).
  • H. Bürger, G. Pawelke, R. Dammel and H. Bock, "Effects of Fluorine Substitution on Methyl Amines", J. Fluorine Chem. 19, 565-577 (1982).
  • H. Bock, R. Dammel and S. Aygen, "The Pyrolysis of Vinyl Azide", J. Am. Chem. Soc. 105, 7681-7685 (1983).
  • H. Bock, R. Dammel and B. Roth, "Molecular State Fingerprints and Semiempirical Hypersurface Calculations: Useful Correlations To Track Short-Lived Molecules", in: Special Reports on 'Inorganic Rings and Clusters', ACS Symp. Series 232, 139-165 (1983).
  • W.A. Herrmann, G.W. Kriechbaum, R. Dammel, H. Bock, M. Ziegler and H. Pfisterer, "Cyclisierung und Fragmentierung aliphatischer Azide an Metall-Metall-Mehrfach¬bindungen: Neuartige Reaktionswege gegenüber ihrer thermischen Zersetzung in der Gasphase", Organomet. Chem. 264, 219-241 (1983)
  • R. Dammel, H. Bock and J.-M. Denis, "The Photoelectron Spectrum of 1-Azetine", Chem. Phys. Lett. 102, 239-243 (1983).
  • H. Bock, R. Dammel and D. Lentz, "The Isomers F3CNC and F3CCN: Photoelectron Spectra, Thermal Rearrangement, and Effects of Fluorine Substitution on parent Molecules C2H3N", Inorg. Chem. 23, 1535-1540 (1984).
  • H. Bock and R. Dammel, "Phenyl-silaisocyanid, die erste Organosilicium-Verbindung mit formaler SiN-Dreifachbindung", Angew. Chem. 97, 128-129 (1985); "Phenyl-silaisocyanide, the First Organosilicon Compound with a Formal Si-N Triple Bond", Angew. Chem. Int. Ed. Engl. 24, 111-112 (1985).
  • H. Bock, B. Solouki, P. Rosmus, R. Dammel, P. Hänel, B. Hierholzer, U. Lechner-Knoblauch and H.P. Wolf, " Recent Investigations on Short-Lived Organosilicon Molecules and Molecular Ions", in: "Organosilicon and Bioorganosilicon Chemistry", ed.: H. Sakurai, E. Horwood Ltd., Chichester 1985, p. 45-73.
  • H. Bock and R. Dammel, "The Pyrolysis of F2HC-N3",Inorg. Chem. 24, 4427-4429 (1985).
  • H. Bock, B. Solouki, S. Aygen, G. Brähler, R. Dammel, J. Giordan, P. Hänel, H. Herrmann, B. Hierholzer, T. Hirabayashi, D. Jaculi, W. Kaim, U. Lechner- Knoblauch, S. Mohmand, H. Müller, P. Rittmeyer, B. Roth and U. Stein, "Kurzlebige Moleküle. Einelektronentransfer-Reaktionen und Ionenpaar-Wechselwirkungen", Nova Acta Leopoldina (Neue Folge) 59 (Nr. 264), 93-106 (1985).
  • H. Bock, R. Dammel and D. Jaculi, "O=C=C=C=S: Synthesis and PE Spectrum", J. Am. Chem. Soc. 108, 7844-7846 (1986).
  • R. Dammel and H. Bock, "The Ionization Patterns of Cyano Methanes H4-nC(CN)n and their Assignment", J. Electr. Spectrosc. Relat. Phen. 41, 311-323 (1986).
  • H. Bock, R. Dammel, S. Fischer and C. Wentrup, "Nitrile Imines RC=N+-N--Si(CH3)3: Optimization of Gas Phase Synthesis and Assignment of their Photoelectron Spectra", Tetrahedron Lett. 28, 617-620 (1987).
  • H. Bock and R. Dammel, "ß-Chlorethylazid: HCl-Eliminierung und Pyrolyse", Z. Naturforsch. 42b, 301-307 (1987).
  • H. Bock, R. Dammel and D.D. DesMarteau, "Die Pyrolysen von Trifluormethylazid und Hexafluorazomethan", Z. Naturforsch. 42b, 308-314 (1987).
  • H. Bock and R. Dammel, "Tricyanmethan-Derivate X-C(CN)3", Z. Naturforsch. 42b, 315-322 (1987).
  • R. Dammel and H. Bock, "Die Pyrolyse von Aziden in der Gasphase", Angew. Chem. 99, 518-540 (1987); "The Pyrolysis of Azides in the Gas Phase", Angew. Chem. Int. Ed. Engl. 26, 504-526 (1987).
  • R. Dammel, K.F. Dössel, J. Lingnau, J. Theis, H. Huber and H. Oertel, "Novolak-Based X-Ray Resist: Kinetics and Simulation", Microelectronic Engineering 6, 503-509 (1987).
  • R. Dammel and H. Bock, "Darstellung von monomerem Methylenaminoacetonitril in der Gasphase", Z. Naturforsch. 42b, 810-814 (1987).
  • H. Bock and R. Dammel, "Methanimine RR'C=NR": Darstellung und Photoelektronen-Spektren", Chem. Ber. 120, 1961-1970 (1987).
  • H. Bock and R. Dammel, "Cycloalkanimine 2H-Azirin, 1-Azetin, 1-Pyrrolin, 1-Piperidein und 3,4,5,6-Tetrahydro-2H-Azepin: Darstellung und Photoelektronen-Spektren", Chem. Ber. 120, 1971-1985 (1987).
  • H. Baumgärtel, H.-W. Jochims, E. Rühl, H. Bock, R. Dammel, J. Minkwitz, and R. Nass, "Photoelectron and Photoionization Mass Spectra of NH2F, NHF2 and NF3", Inorg. Chem. 28 (5), 943-945 (1989).
  • H. Bock and R. Dammel, "The Gas-Phase Pyrolyses of Alkyl Azides: Experimental Evidence for Chemical Activation", J. Am. Chem. Soc. 110, 5261-5269 (1988). 
  • E.F. Paulus, R. Dammel, G. Kämpf, P. Wegener, K. Siam, K. Wolinski, and L. Schäfer, "Structure of 3,3'-Dimethoxy-2,2'-bithiophene and Comparison with Quantum-Chemical Calculations", Acta Cryst. B44, 509-511 (1988).
  • M. Lazraq, J. Escudié, C. Couret, J. Satgé, M. Dräger, and R. Dammel, "(Mesityl)2Ge=(fluorenyliden) - Stabilisierung einer Ge=C-Doppelbindung durch Ladungsübertragung in ein aromatisches System", Angew. Chem. 100, 885-887 (1988); "(Mesityl)2Ge=(fluorenylidene) - Stabilization of a Ge=C Double Bond by Charge Transfer into an Aromatic System", Angew. Chem. Int. Ed. Engl. 27, 828-830 (1988).
  • H. Bock, B. Solouki, S. Aygen, M. Bankmann, O. Breuer, R. Dammel, J. Dörr, M. Haun, T. Hirabayashi, D. Jaculi, J. Mintzer, S. Mohmand, H. Müller, P. Rosmus, B. Roth, J. Wittmann, and H.-P. Wolf, "Optimization of Gasphase Reactions Using Real-Time PES Analysis: Short-Lived Molecules and Heterogeneously Catalyzed Processes", J. Mol. Struct. 173, 31-49 (1988).
  • A. Menschig, A. Forchel, R. Dammel, J. Lingnau, U. Scheunemann, J. Theis, and S. Pongratz, "High Sensitivity Positive-Tone Resist RAY-PF - Performance under E-Beam Exposure", Microelectronic Engineering 9, 571-574 (1989).
  • J. Chlebek, H.L. Huber, H. Oertel, M. Weiß, R. Dammel, J. Lingnau, and J. Theis,  "Computer-Aided Resist Modelling with Extended XMAS in X-Ray Lithography", Microelectronic Engineering 9, 629-633 (1988).
  • R. Dammel, K.F. Dössel, J. Lingnau, J. Theis, H.L. Huber, H. Oertel, and J. Trube, "Negative-Tone High-Resolution Photoresist for X-Ray Lithography", Microelectronic Engineering 9, 575-578 (1988).
  • F. Bijkerk, G.E. van Dorssen, M.J. van der Wiel, R. Dammel, and J. Lingnau, "Laser Plasma as X-Ray Source for Lithographic Imaging of Submicron Structures Into Experimental X-Ray Resist", Microelectronic Engineering 9, 121-125 (1988).
  • J. Lingnau, R. Dammel, and J. Theis, "Highly Sensitive Novolak-Based X-Ray Positive Resist", in: Photopolymers: Principles and Materials, Technical Papers of the Regional Technical Conference of SPE Mid-Hudson Section, Ellenville, N.Y., 1988, p. 87-97; Polym. Eng. Sci. 29 (13), 874-877 (1989).
  • R. Dammel, J. Lingnau, and J. Theis, "Hochempfindlicher, positiv arbeitender Röntgenresist", Der Elektroniker Nr.11/1988, p.62-65.35) R. Dammel, J. Lingnau, J. Theis, J. Spohr, and J. Vetter, "Heavy-Ion Tracks in Developed Photocatalytic Resist", in: Jahresbericht 1988 der Gesellschaft für Schwerionenforschung (GSI), Darmstadt, 1988.36) H. Oertel, M Weiss, J. Chlebek, H. Huber, R. Dammel, J. Lingnau, C.R. Lindley, and J. Theis, "Resist Modeling Near Resolution and Sensitivity Limits", Proc. SPIE 1089, 283 - 302 (1989).
  • S. Pongratz, S. Demmeler, Ch. Ehrlich, K. Kohlmann, K. Reimer, R. Dammel, W. Hessemer, J. Lingnau, U. Scheunemann and J. Theis, "E-Beam Applications of Highly Sensitive Positive- and Negative-Tone Resists for X-Ray Mask Making", Proc. SPIE 1089, 303-316 (1989).
  • Ch. Ehrlich, R. Demmeler, U. Goepel, S. Pongratz, K. Reimer, R. Dammel, J. Lingnau, and J. Theis, "One-Layer Technique for Absorber Structuring of E-Beam Written Mastermasks for X-Ray Lithography", Proc. Microprocess Conf., Kobe, Japan.
  • J. Lingnau, R. Dammel und J. Theis, "Für feinste Strukturen", Hoechst High Chem-Magazin 6, 50-53 (1988); "For ultra-fine structures", Hoechst High Chem-Magazin 6, 50-53 (1989) (English edition); "Des structures ultrafines", Hoechst High Chem-Magazin 6, 50-53 (1989) (version française); "Para las más finas estructuras", Hoechst High Chem-Magazin 6, 50-53 (1989) (version español).
  • J. Lingnau, R. Dammel and J. Theis, "Recent Trends in X-Ray Resists I", Solid State Technology, 105-112, September 1989.
  • J. Lingnau, R. Dammel and J. Theis, "Recent Trends in X-Ray Resists II", Solid State Technology, 107-111, October 1989.
  • G. Buhr, R. Dammel and C.R. Lindley, "Non-Ionic Photoacid Generating Compounds", ACS Symposium Series, Proc. ACS PMSE 61, 269-277 (1989).
  • U. Mescheder, U. Mackens, H. Lifka, R. Dammel, G. Pawlowski, and J. Theis, "Application of Positive and Negative Tone X-Ray Resists for 0.5 µm CMOS Device Fabrication", Microelectronic Engineering 11, 481-485 (1990).
  • H.K. Oertel, M. Weiss, R. Dammel and J. Theis, "Percolation Theory and Resist Development in X-Ray Lithography", Microelectronic Engineering 11, 267-270 (1990)
  • G. Pawlowski, R. Dammel, C.R. Lindley, H.-J. Merrem, H. Röschert, and P. Wilharm, "A Novel Two-Component Positive Photoresist for Deep-UV Lithography", Microelectronic Engineering 11, 491-495 (1990)
  • R. Dammel and S. Pongratz, "Hochempfindliche Elektronenstrahl-Resists", VDI-Bericht 795: Maskentechnik für Mikroelektronik-Bausteine, p. 137-151 (1989)
  • J. Lingnau, R. Dammel, C.R. Lindley, G. Pawlowski, U. Scheunemann, and J. Theis, "Highly Sensitive X-Ray and E-Beam Resists Using Chemical Amplification", in: Y. Tabata, I. Mita, S. Nonogaki, K. Horie, and S. Tagawa (eds.),  "Polymers for Microelectronics - Science and Technology", p. 445-462, Verlag Chemie, Weinheim/Bergstraße 1990.
  • G. Pawlowski, R. Dammel, C.R. Lindley, H.-J. Merrem, H. Röschert, and J. Lingnau, "Chemically Amplified DUV Photoresists Using a New Class of Photoacid Generating Compounds", Proc. SPIE 1262, 16-25 (1990).
  • R. Dammel, C.R. Lindley, G. Pawlowski, U. Scheunemann, and J. Theis, "Highly Sensitive X-Ray and E-Beam Resist Using Chemical Amplification", Proc. SPIE 1262, 378-390 (1990).
  • G. Pawlowski, T. Sauer, R. Dammel, D.J. Gordon, W. Hinsberg, D. McKean, C.R. Lindley, H.-J. Merrem, R. Vicari, and C.G. Willson, "Modified Polyhydroxystyrenes as Matrix Resins for Dissolution Inhibition Type Photoresists", Proc. SPIE 1262, 391-400 (1990).
  • R. Dammel, C.R. Lindley, W. Meier, G. Pawlowski, J. Theis, and W. Hencke, "Considerations on the Focus Latitude for G-Line and DUV Resists", Proc. SPIE 1264, 26-37 (1990).
  • H. Bock, R. Dammel, P. Lorencak, and C. Wentrup, "PE-Spektren und Pyrolysen stickstoffreicher Kohlenstoff-Verbindungen: CN4, C2N4, C2H2N4, C4H6N4 und C5H4N4", Z. Naturforsch. 45b, 59-71 (1990).
  • R.-U. Ballhorn, R. Dammel, H.H. David, Ch. Eckes, A. Fricke-Damm, K. Kreuer, G. Pawlowski, and K. Przybilla, "Performance Optimization of the Chemically Amplified Radiation Resist RAY-PF", Microelectronics Eng. 13, 73-78 (1991).
  • G. Pawlowski, R. Dammel, Ch. Eckes, C.R. Lindley, W. Meier, K. Przybilla, H. Röschert, and W. SPIEß, "Substituted Hydroxystyrenes as Matrix Resins for Chemical Amplification Resist", Microelectronic Engineering 13, 29-32 (1991).
  • K. Przybilla, H. Röschert, W. SPIEß, Ch. Eckes, G. Pawlowski, and R. Dammel, "Progress in DUV Resins",Proc. SPIE 1466, 174-187 (1991).
  • Ch. Eckes, G. Pawlowski, K. Przybilla, J. Theis, U. Scheunemann, and R. Dammel, "Process Latitude of Chemically Amplified Radiation Resists RAY-PF and AZ PN114", Proc. SPIE 1466, 395-407 (1991).
  • H. Röschert, W. SPIEß, W. Meier, R. Dammel, and G. Pawlowski, "Advanced Material for Deep UV Lithography", Lambda Highlights 27/28, 1-4 (April 1991)
  • K.-J. Przybilla, R. Dammel, H. Röschert, W. SPIEß, and G. Pawlowski, "New t-BOC Blocked Polymers for Advanced Lithographic Applications", Proc. VIII. Photopolymer Sci. Technol. Conf., Tokyo (June 1991), J. Photopolym. Sci. Technol. 4 (3), 421-432 (1991).
  • G. Pawlowski, R. Dammel, K.-J. Przybilla, H. Röschert, and W. SPIEß, "Novel Photoacid Generators: Key Components for the Progress of Chemically Amplified Photoresist Systems",Proc. VIII. Photopolymer Sci. Technol. Conf., Tokyo (June 1991): J. Photopolym. Sci. Technol. 4 (3), 389-402
  • K.-J. Przybilla, R. Dammel, H. Röschert, G. Pawlowski, and W. SPIEß, "t-BOC Blocked Hydroxyphenylmethacrylates: On the way to Quarter Micron Deep UV Lithography", Proc. SPE Reg. Tech. Conf. (Ellenville) 1991, 131-144.
  • G. Pawelke and R. Dammel, "Darstellung von Difluormethanimin F2C=NH und F2C=ND durch Hydrolyse von CF3NCO; Kernresonanz-, Schwingungsspektren, Normalkoordinaten-analyse und Photoelektronenspektrum", Z. Naturforsch. B 47(3), 351-357 (1992).
  • H. Röschert, R. Dammel, C. Eckes, W. Meier, K.J. Przybilla, W. SPIEß, and G. Pawlowski, "DN21, DN41: Negative-Tone Photoresists for DUV Lithography", Proc. SPIE 1672, 157-171 (1992).
  • W.R. Brunsvold, N.K. Eib, C.F. Lyons, W. Montgomery, M. Plat, R. Dammel, O.E. Evans, M.D. Rahman, S. Jain, and P. Lu, "Novel DNQ-PACs for High-Resolution i-Line Lithography", Proc. SPIE 1672, 273-285 (1992)64) R. Dammel, "Advances in Resists for Ionizing Radiation", Proc. PMSE 66, 184-187 (1992).
  • R. Dammel and A. Reiser, “Recent Developments in the Dissolution of Novolak-Based Resists”, Polym. Mater. Sci. Eng. 68, 49-51 (1993).
  • R. Dammel and M. Khadim, “Host-Guest Effects in the Interaction of Developers with Phenolic Resins”, Proc. SPIE 1925, 205 (1993).
  • T.F. Yeh, A. Reiser, R.R. Dammel, G. Pawlowski, and H. Roeschert, “A Scaling Law for the Dissolution of Phenolic Resins in Aqueous Base”, Proc. SPIE 1925, 571-581 (1993)
  • T.F. Yeh, A. Reiser, R. Dammel, G. Pawlowski, H. Roeschert, “A percolation view of novolak dissolution. 2. The statistics of a three-dimensional cubic percolation field and a generalized scaling law”, Macromolecules 26 (15), 3862-3869 (1993), 
  • R. Dammel, "Advances in Resists for Ionizing Radiation", ACS Symp. Ser. 537 (Polymers for Microelectronics), 252-281 (1994),
  • H.-Y. Shih, T.F. Yeh, A. Reiser, R.R. Dammel, H.J. Merrem, and G. Pawlowski, “A Percolation View of Novolak Dissolution: 3. Dissolution Inhibition”, Proc. SPIE 2195, 514-523, (1994).
  • H.-Y. Shih, T.F. Yeh, A. Reiser, R.R. Dammel, H.J. Merrem, and G. Pawlowski, “A Percolation View of Novolak Dissolution. 3. Dissolution Inhibition”, Macromolecules 27 (12), 3330-3336 (1994),
  • R.R. Dammel, M.D. Rahman, P.H. Lu, A. Canize, and V. Elango, “Lithographic Performance of Isomeric Hydroxystyrene Polymers”, Proc. SPIE 2195, 542-557 (1994).
  • M. Borzo, J.J. Rafalko, and R.R. Dammel, “Molecular Basis for the Interaction Between Novolaks and Diazonaphthoquinone Photoactive Compounds”, Proc. SPIE 2195, 673-684 (1994).
  • M.D. Rahman, R.Dammel and D. Durham, “Rearrangement of Novolak Resins”, Proc. SPIE 2195, 685-695 (1994).
  • J. Di Carlo, O.B. Evans, J. Fedyck, S. Ficner, M. Khadim, and R.R. Dammel, “Identification of Diazonaphthoquinone Esters of Polyhydroxybenzophenone Compounds”, Proc. SPIE 2195, 696-706 (1994).
  • R. Dammel, M.D. Rahman, P.H. Lu, and V. Elango, “Lithographic Performance of Isomeric Hydroxystyrene Copolymers”, Polym. Adv. Technol. 5 (1), 28-40 (1994).
  • M. Dalil Rahman, R. Dammel, and D. Durham, “The Effect of Lewis Bases on the Molecular Weight of Novolak Resins”, Proc. 10th Int. Conf. Photopolym. (Ellenville), 299-304 (1994).
  • M. Borzo, J.J. Rafalko, M. Joe, R.R. Dammel, M.D. Raman, and M.A. Ziliox, “Spectroscopic Characterization of Molecular Interactions Between DNQ-PACs and Phenolic Resins Using Selectively Nitrogen-15 Labeled DNQs”, Proc. SPIE 2438, 294-304 (1995).
  • A. Canize, W. SPIEß, S. Ficner, P.H. Lu, Ralph Dammel, and Y.M.  Perez, “An Advanced Photoresist for High-Throughput i-Line Stepper Applications”, Proc. SPIE 2438, 392-402 (1995).
  • R.R. Dammel, “Antireflective Coatings: Sultans of the Swing Curve”,  Semiconductor Fabtech 2, 215-221 (1995).
  • J. Sounik, R. Vicari, P.H. Lu, E. Kokinda, S. Ficner, and R.R. Dammel, “Synthesis and Lithographic Performance of Highly Branched Polymers From Hydroxyphenylmethylcarbinols”, Proc. SPIE 2724, 196-207 (1996)
  • S. Ficner, O. Alile, P.H. Lu, E. Kokinda, and R.R. Dammel, “Lithographic Characterization of AZ®7800 High-Resolution Photoresist”, Proc. SPIE 2724, 512-524 (1996)
  • S. Ficner, J. Hermanowski, P.H. Lu, E. Kokinda, Y. Perez, and R.R. Dammel, “The Development of Two New Thick Film Photoresists”, Proc. SPIE 2724, 654-665 (1996)
  • T.S. Yang, T. Kook, J.A. Taylor, W. Josephson, M. Spak, and R.R. Dammel, “Enhanced i-Line Lithography Using AZ®BARLi™ Coating”, Proc. SPIE 2724, 724-737 (1996).
  • R.R. Dammel and R.A. Norwood, “Modeling of Bottom Anti-Reflection Layers: Sensitivity to Optical Constants”, Proc. SPIE 2724, 754-769 (1996).
  • H.-J. Merrem, R.R. Dammel, and G. Pawlowski, “High Performance Photoresists For Microlithography”, J. Information Recording Materials 22, 481-520 (1996).
  • C. L. Henderson, C.G. Willson, R.R. Dammel, R.A. Synowicki, “Bleaching-induced changes in the dispersion curves of DNQ photoresists”, Proc. SPIE 3049, 585-595 (1997).
  • S. Ding, D.N. Khanna, P.-H. Lu, R.R. Dammel, J. Shan, S. Mehtsun, D.E. Eberly, D.N. Khanna, T.T. Hannigan, and H. Tanaka, “Novel polymeric dyes for bottom antireflective coatings”, Proc. SPIE 3049, 765-774 (1997).
  • S.L. Blair, C.W. Chu, R.R. Dammel, and R.H. Hill, “Use of complex coordination chemistry for the deposition of inorganic materials: spin on metals and photoresist-free lithography”, Proc. SPIE 3049, 829-837 (1997).
  • S.A. Ficner, R.R. Dammel, Y. Perez, A.B. Gardiner, and C.G. Willson, “Refractive indices in thick photoresist films as a function of bake conditions and film exposure”, Proc. SPIE 3049, 838-849 (1997).91) J.R. Johnson, A.M. Davis, A.E. Bair, P.D. Nunan, C.R. Spinner III, M. Spak, R.R. Dammel, “A Planarizing BARC 0.32 µm i-line Lithography Process for the Reduction of Intra-die CD Variation”,Proc. SPIE 3051, 191-203 (1997). 
  • R.R. Dammel, J. Sagan, R.A. Synowicki, “Dependence of optical constants of AZ®BARLi bottom coating on bake conditions”, Proc. SPIE 3049, 963-973 (1997). 
  • C.G. Willson, Y. Wang, M.J. Leeson, T. Steinhausler, C.L. McAdams, R.R. Dammel, J. Sounik, M. Aslam, R. Vicari, and M. Sheehan, “New non-chemically amplified 248 nm resist”, Proc. SPIE 3049, 226-237 (1997).
  • R.J. Eakin, G.J. Stagaman, S.F. Detweiler, M. Tesauro, M.A. Spak, and R.R. Dammel, “Process effects resulting from an increased BARC thickness”, Proc. SPIE 3049, 192-203 (1997).
  • C.L. Henderson, S.N. Pancholi, S.A. Chowhury, C. G. Willson, and R.R. Dammel, “Photoresist Characterization for Lithography Simulation,  Part II: Exposure Parameter Measurements”, Proc. SPIE 3049, 816-828 (1997).
  • C.L. Henderson, P.C Tsiartas, S.N. Pancholi, S.A. Chowhury, C. G. Willson, K.D Dombrowski, R.R. Dammel, “Photoresist Characterization for Lithography Simulation,  Part III: Development Parameter Measurements”, Proc. SPIE 3049, 805-815 (1997).
  • C.A. Mack, K.E. Mueller, A.B. Gardiner, A. Qin, R.R. Dammel, W.G. Koros, and C.G. Willson, “Diffusivity Measurements in Polymers Part I: Lithographic Modeling Results”, Proc. SPIE 3049, 355-362 (1997). 
  • A.B. Gardiner, A. Qin, C.L. Henderson, S. Pancholi, W.J. Koros, C.G. Willson, R.R. Dammel, C. Mack, and W.D. Hinsberg, “Diffusivity Measurements in Polymers Part II: Residual Casting Solvent Measurement by Liquid Scintillation Counting,”, Proc. SPIE 3049, 850-860 (1997). 
  • R.R. Dammel, “Theoretical basis for a new development rate model for positive photoresists”, J. Photopolym. Sci. Technol.  10 (3), 379-386 (1997).  
  • C.G. Willson, R.R. Dammel, and A. Reiser, “Photoresist materials: a historical perspective”, Proc. SPIE 3048, 28-41 (1997); Proc. SPIE 3049, 28-41 (1997); Proc. SPIE 3050, 28-41 (1997); Proc. SPIE 3051, 28-41 (1997). 
  • R.R. Dammel, “Technologies for Bottom Anti-Reflective Coatings”, Future Fab International 3, 163-166 (1997). 
  • R.A. Synowicki, J.N. Hilfiker, R.R. Dammel, and C.L. Henderson, “Refractive index measurements of photoresist and antireflective coatings with variable angle spectroscopic ellipsometry”, Proc. SPIE 3332, 384-390 (1998).
  • R.R. Dammel, J.P. Sagan, E. Kokinda, N. Eilbeck, C.A. Mack, G.G. Arthur, C.L. Henderson, S.A. Scheer, B.M. Rathsack, and C.G. Willson, “Improved simulation of photoresists using new development models”, Proc. SPIE  3333, 401-416 (1998).
  • P.-H. Lu, S. Mehtsun, J. Sagan, R. Dammel, I. McCulloch, M. Kang, H. Tanaka, and K. Kimura, “Water-castable bottom antireflective coatings”, Proc. SPIE-Int. Soc. Opt. Eng. 3333, 806-817 (1998).
  • R.R. Dammel,.J.P. Sagan, E. Kokinda, N. Eilbeck, C.A. Mack, G.G. Arthur, C.L. Henderson, S.A. Scheer, B.M. Rathsack, C.G. Willson, “Improved simulation of photoresists using new development models”, Proc. SPIE 3333, 401-416 (1998).
  • C.L.Henderson, S.A. Scheer, P.C. Tsiartas, B.M. Rathsack, J.P. Sagan, R.R. Dammel, A. Erdmann, and C.G. Willson, “Modeling parameter extraction for DNQ-novolak thick film resists”, Proc. SPIE 3333, 256-267 (1998).
  • R.R. Dammel, S. Ficner, J. Oberlander, A. Klauck-Jacobs, M. Padmanaban, D.N. Khanna, D.L. Durham, “Lithographic performance of a dry-etch stable methacrylate resist at 193 nm”, Proc. SPIE-Int. Soc. Opt. Eng. 3333, 144-151 (1998).
  • C.A. Mack, K.E. Mueller, A.B. Gardiner, J.P. Sagan, R.R. Dammel, and C.G. Willson, “Modeling of solvent diffusion in photoresist”,  J. Vac. Sci. Technol., B16(6), 3779-3783 (1998).
  • A. Caligiore, M. Valtolina, A. Cipolli, A. Monguzzi, F. Mohr, M.A. Spak, and R.R. Dammel, “Optimizing image transfer into AZ®BARLi™ bottom coat for submicron i-line lithography”, Proc. SPIE 3333, 1360-1364 (1998). 
  • A. Erdmann, C.L. Henderson; C.G. Willson, R.R. Dammel, “Some aspects of thick film resist performance and modeling”, Proc. SPIE 3333, 1201-1211 (1998).
  • J.C. Cox, L. Welsh, D. Murphy, R. Eakin, P. Silvestre, R.R. Dammel, S. Ding, B. Williams, D.N. Khanna, “Process effects resulting from conversion to a ‘safe-solvent’  organic BARC”, Proc. SPIE 3333, 1040-1050 (1998).
  • M.A. Spak, F. Mohr, R. Bradbury,  R.R. Dammel, J.W. Weigold, and S.W. Pang, “Novel approach to surface imaging”, Proc. SPIE. 3333,  1017-1023 (1998).
  • R.R. Dammel, “New developments in high-performance resist materials”, J. Photopolym. Sci. Technol. 11(4),  687-704 (1998).
  • R.A. Synowicki, J.N. Hilfiker, R.R. Dammel,C.L. Henderson, “Refractive index measurements of photoresist and antireflective coatings with variable angle spectroscopic ellipsometry”, Proc. SPIE 3332, 384-390 (1998)
  • R.R. Dammel, “Future markets and applications of photoresists for the semiconductor industry”,  Book of Abstracts, 217th ACS National Meeting, Anaheim, Calif., March 21-25  (1999).
  • R.R. Dammel, “The role of resists in extending optical lithography”, Semiconductor Fabtech 10, 253-268 (1999).
  • M. Padmanaban, S. Ding, S.A. Ficner, W.-B. Kang, D.N. Khanna, and R.R. Dammel, “Bottom antireflective coatings for ArF, KrF, and i-line applications: a comparison of theory, design, and lithographic aspects”, Proc. SPIE 3678, 550-561 (1999). 
  • D. Rahman, R.R. Dammel, M.M. Cook, S.A. Ficner, M. Padmanaban, J.E. Oberlander, D.L. Durham, A. Klauck-Jacobs, “Cycloolefin/maleic anhydride copolymers for 193-nm resist compositions”, Proc. SPIE 3678, 1193-1200 (1999).
  • P.J. Paniez, S. Gally, B.P. Mortini, C. Rosilio, P.-O. Sassoulas, R.R. Dammel.; M. Padmanaban, A. Klauck-Jacobs, and J.E. Oberlander, “Thermal phenomena in acrylic 193-nm resists”, Proc. SPIE 3678, 1352-1363 (1999).
  • R. Redd, M.A. Spak, J.P. Sagan, O.P. Lehar, and R.R. Dammel, “Lithographic process for high-resolution metal lift-off”, Proc. SPIE 3678, 1341-1351 (1999).
  • M. Padmanaban, M.M Cook, D.L. Durham, D.N. Khanna, A. Klauck-Jacobs, J.E. Oberlander, D. Rahman, and R.R. Dammel, “Performance of 193 nm resists based on alicyclic methacrylate and cycloolefin systems”, Proc. SPIE 3741, 234-244 (1999). 
  • M. Padmanaban, S. Ding, W.-B. Kang, D.N. Khanna, R.R. Dammel, “Polymeric dyes for antireflective coatings: theory, design, and lithographic aspects”, Polym. Mater. Sci. Eng. 81, 65-66 (1999).
  • R.R. Dammel, M. Cook, A. Klauck-Jacobs, J. Oberlander, D. Rahman, M. Padmanaban, “Progress in polymers and photoresists applicable for 193 nm lithography”, Polym. Mater. Sci. Eng. 81, 33-34 (1999).
  • R. Dammel, M. Cook, A. Klauck-Jacobs, T. Kudo, S. Mehtsun, J. Oberlander, M. Padmanaban, D. Rahman,  “193 nm Resists for deep sub-wavelength applications”, J. Photopolym. Sci. Technol. 12(3),  433-444 (1999).
  • M. Dalil Rahman, Jun-Bom Bae, Michelle Cook, Dana L. Durham, Takanori Kudo, Woo-Kyu Kim, Munirathna Padmanaban and Ralph R. Dammel, “Cycloolefin/maleic Anhydride Copolymers for 193 nm Resist Applications,” Proc. SPIE 3999, 220-227 (2000)
  • Octavia P. Lehar, John P. Sagan, Lizhong Zhang, and Ralph R. Dammel, “Solvent Content in Thick Photoresist Films,” Proc. SPIE 3999, 442-451 (2000).
  • Warren Montgomery, Pingyong Xu, Ping-Hung Lu, Salem Mehtsun, Ralph Dammel, Nara Meyyappan, Noriyuki Kobayashi, and David Pritchard, “Studies directed to the design and development of a high energy implant resist”, Proc. SPIE 3999, 531-544 (2000)
  • Munirathna Padmanaban, Jun-Bom Bae, Michelle Cook, Woo-Kyu Kim, Axel Klauck-Jacobs, Takanori Kudo, M. Dalil Rahman, Ralph R. Dammel, and Jeffrey D. Byers, “Application of Photodecomposble Base Concept to 193 nm Resists,” Proc. SPIE 3999, 1137-1146 (2000).
  • Munirathna Padmanaban, Jun-Bom Bae, Woo-Kyu Kim, Takanori Kudo, M. Dalil Rahman, and Ralph R. Dammel, “Layer-Specific Resists for 193nm Lithography”, J. Photopolym. Sci. Technol. 13 (4), 607-616 (2000).
  • Munirathna Padmanaban, Jun-Bom Bae, Michelle Cook, Woo-Kyu Kim, Axel Klauck-Jacobs, Takanori Kudo, M. Dalil Rahman, Ralph R. Dammel, and Jeffrey D. Byers, “Sensitized Transparent Photobase Additive For 193 nm Lithography”, J. Photopolym. Sci. Technol. 13 (4), 617-624 (2000).
  • Dammel, R. R.; Cook, M.; Klauck-Jacobs, A.; Oberlander, J.; Rahman, D.; Padmanaban, M., “Progress in polymers and photoresists applicable for 193 nm lithography.” Book of Abstracts, 218th ACS National Meeting, New Orleans, Aug. 22-26 (1999). 
  • Dammel, Ralph. “Traditional photoresist technology: Today and tomorrow.” Book of Abstracts, 219th ACS National Meeting, San Francisco, CA, March 26-30, 2000 (2000). 
  • Dammel, Ralph R. Bae, Jun-Bom; Kim, Woo-Kyu; Kudo, Takanori; McKenzie, Douglas; Padmanaban, Munirathna; Rahman, M. Dalil. Hybrid cycloolefin-maleic anhydride copolymers for 193 nm lithography. Abstr. Pap. - Am. Chem. Soc. (2001), 221st PMSE-158. 
  • Dammel, Ralph R. Sakamuri, Raj; Kudo, Takanori; Romano, Andrew; Rhodes, Larry; Vicari, Richard; Hacker, Cheryl; Conley, Will; Miller, Daniel. New resin systems for 157 nm lithography. Journal of Photopolymer Science and Technology (2001), 14(4), 603-612. 
  • Padmanaban, Munirathna; Alemy, Eric; Bae, Jun-Bom; Kim, Woo-Kyu; Kudo, Takanori; Masuda, Seiya; Rahman, Dalil; Sakamuri, Raj; Dammel, Ralph; Jung, Jae-Chang; Lee, Sung-Koo; Shin, Ki-Soo. Materials and resists for 193 and 157 nm applications. Journal of Photopolymer Science andTechnology (2001), 14(4), 631-642. 
  • Kudo, Takanori; Dammel, Ralph R.; Bae, Jun-Bom; Rahman, M. Dalil; Kim, Woo-Kyu; McKenzie, Douglas; Alemy, Eric L.; Ng, Waiman; Padmanaban, Munirathna, Mechanistic studies on the CD degradation of 193 nm resists during SEM inspection,. Journal of Photopolymer Science and Technology (2001), 14(3), 407-418. 
  • Rahman, M. Dalil; McKenzie, Douglas S.; Bae, Jun-Bom; Kudo, Takanori; Kim, Woo-Kyu; Padmanaban, Munirathna; Dammel, Ralph R.. Novel hybrid copolymers of cycloolefin/maleic anhydride (COMA)/methacrylate for 193-nm resist compositions. Proceedings of SPIE-The International Society for Optical Engineering (2001), 4345(Pt. 1, Advances in Resist Technology and Processing XVIII), 159-167. 
  • Kudo, Takanori; Bae, Jun-Bom; Dammel, Ralph R.; Kim, Woo-Kyu; McKenzie, Douglas S.; Rahman, M. Dalil; Padmanaban, Munirathna; Ng, Waiman. CD changes of 193-nm resists during SEM measurement. Proceedings of SPIE-The International Society for Optical Engineering (2001), 4345(Pt. 1, Advances in Resist Technology and Processing XVIII), 179-189. 
  • Dammel, Ralph R.; Sakamuri, Raj; Romano, Andrew R.; Vicari, Richard; Hacker, Cheryl; Conley, Will; Miller, Daniel A. Transparent resins for 157-nm lithography. Proceedings of SPIE-The International Society for Optical Engineering (2001), 4345(Pt. 1, Advances in Resist Technology and Processing XVIII), 350-360. 
  • Lehar, Octavia P.; Spak, Mark A.; Meyer, Stephen; Dammel, Ralph R.; Brodsky, Colin J.; Willson, C. Grant. Resist rehydration during thick film processing. Proceedings of SPIE-The International Society for Optical Engineering (2001), 4345(Pt. 1, Advances in Resist Technology and Processing XVIII), 463-474. 
  • Chun, Jun-Sung; Maeng, Chang Ho; Tesauro, Mark R.; Sturtevant, John L.; Oberlander, Joseph E.; Romano, Andrew R.; Sagan, John P.; Dammel, Ralph R.. Toward 0.1-mm contact hole process by using water-soluble organic overcoating material (WASOOM)-- Resist flow technology III. Study on WASOOM, top flare, and etch characterization. Proceedings of SPIE-The International Society for Optical Engineering (2001), 4345(Pt. 2, Advances in Resist Technology and Processing XVIII), 647-654. 
  • Kudo, Takanori; Alemy, Eric L.; Dammel, Ralph R.; Kim, Woo-Kyu; Lee, Sang-Ho; Masuda, Seiya; McKenzie, Douglas; Rahman, M. Dalil; Romano, Andrew; Padmanaban, Munirathna; Chun, Jun-Sung; Jung, Jae-Chang; Lee, Sung-Koo; Shin, Ki-Soo; Kim, Hyeong-Soo. Optimization of 193 nm contact hole resists for 100 nm node. Journal of Photopolymer Science and Technology (2002), 15(4), 549-558. 
  • Conley, Will; Miller, Daniel; Chambers, Charles; Trinque, Brian C.; Osborn, Brian; Chiba, Takashi; Zimmerman, Paul; Dammel, Ralph; Romano, Andrew; Willson, C. Grant. Dissolution inhibitors for 157 nm lithography: a progress report. Journal of Photopolymer Science and Technology (2002), 15(4), 613-617. 
  • Padmanaban, Munirathna; Alemy, Eric; Dammel, Ralph; Kim, Woo-Kyu; Kudo, Takanori; Lee, Sangho; Rahman, Dalil; Chen, Wan-Lin; Sadjadi, Reza M.; Livesay, William; Ross, Matthew. Etch properties of 193nm resists: issues and approaches. Journal of Photopolymer Science and Technology (2002), 15(3), 521-527. 
  • Conley, Will; Miller, Daniel A.; Chambers, Charles R.; Osborn, Brian Philip; Hung, Raymond Jui-Pu; Tran, Hoang Vi; Trinque, Brian C.; Pinnow, Matthew J.; Chiba, Takashi; McDonald, Scott; Zimmerman, Paul; Dammel, Ralph R.; Romano, Andrew R.; Willson, C. Grant. Dissolution inhibitors for 157-nm microlithography. Proceedings of SPIE-The International Society for Optical Engineering (2002), 4690 69-75. 
  • Conley, Will; Trinque, Brian C.; Miller, Daniel A.; Zimmerman, Paul; Kudo, Takanori; Dammel, Ralph R.; Romano, Andrew R.; Willson, C. Grant. Negative photoresist for 157-nm microlithography; a progress report. Proceedings of SPIE-The International Society for Optical Engineering (2002), 4690 94-100. 
  • Dammel, Ralph R.; Sakamuri, Raj; Lee, SangHo; Rahman, Dalil; Kudo, Takanori; Romano, Andrew R.; Rhodes, Larry F.; Lipian, John-Henry; Hacker, Cheryl; Barnes, Dennis A.,  Cycloolefin/cyanoacrylate (COCA) copolymers for 193-nm and 157-nm lithography. Proceedings of SPIE-The International Society for Optical Engineering (2002), 4690 101-109. 
  • Rahman, Dalil; Alemy, Eric L.; Conley, Will; Miller, Daniel; Dammel, Ralph R.; Kim, Woo-Kyu; Kudo, Takanori; Lee, SangHo; Masuda, Seiya; McKenzie, Douglas S.; Padmanaban, Munirathna. “High-performance 193-nm resist composition using hybrid copolymers of cycloolefin/maleic anhydride (COMA)/methacrylate”, Proceedings of SPIE-The International Society for Optical Engineering (2002), 4690 127-135. 
  • Kudo, Takanori; Alemy, Eric L.; Dammel, Ralph R.; Kim, Woo-Kyu; Lee, SangHo; Masuda, Seiya; McKenzie, Douglas S.; Rahman, Dalil; Romano, Andrew R.; Padmanaban, Munirathna; Chun, Jun-Sung; Jung, Jae Chang; Lee, Sung-Koo; Shin, Ki Soo; Kim, Hyeong-Soo. Illumination, acid diffusion, and process optimization considerations for 193-nm contact hole resists. Proceedings of SPIE-The International Society for Optical Engineering (2002), 4690 150-159. 
  • Dammel, Ralph R.. Photoresists for microlithography, or The Red Queen's Race. Proceedings of SPIE-The International Society for Optical Engineering (2002), 4690 1-10;  Ralph R. Dammel, “Photoresists for Microlithography, or The Red Queen’s Race”, Journal of Microlithography, Microfabrication and Microsystems 1(3),  270-275 (2002).
  • Padmanaban, Munirathna; Alemy, Eric L.; Dammel, Ralph R.; Kim, Woo-Kyu; Kudo, Takanori; Lee, SangHo; McKenzie, Douglas S.; Orsi, Aldo; Rahman, Dalil; Chen, Wan-Lin; Sadjadi, Reza M.; Livesay, William R.; Ross, Matthew F.,  E-beam curing effects on the etch and CD-SEM stability of 193-nm resists. Proceedings of SPIE-The International Society for Optical Engineering (2002), 4690 606-614. 
  • M. Padmanaban, E.Alemy, Ralph Dammel, W.K. Kim, T. Kudo, S.-H. Lee, D. Rahman, W.-L. Chen, R.M. Sadjadi, W. Livesay, and M. Ross, “Etch Properties of 193 nm Resists” Issues and Approaches,” J. Photopolym. Sci. Technol. 15 (3), 521-528 (2002). 
  • T. Kudo, E.L. Alemy, Ralph R. Dammel, W.-K. Kim, S.-H. Lee, S. Masuda, D.McKenzie, M. D. Rahman, A. Romano, and M. Padmanaban, “Optimization of 193 nm contact hole resists for 100 nm node,” J. Photopolym. Sci. Technol. 15 (4), 549-558 (2002).
  • W. Conley, D. Miller, C. Chambers, B.C. Trinque, B. Osborn, T. Chiba, P. Zimmermann, R. Dammel, A. Romano, and C.G. Willson, “Dissolution Inhibitors for 157 nm lithography”, J. Photopolym. Sci. Technol. 15 (4), 613-619 (2002).
  • Ralph R. Dammel, “Moore's Law: Recognizing the major contributions of "wetware”, Industry Insights, in: Solid State Technology October 2002, 
  • Munirathna Padmanaban, Ralph R. Dammel, SangHo Lee, Woo-Kyu Kim, Takanori Kudo, Douglas S. McKenzie, Dalil Rahman,  “Performance of imide and methide onium PAGs in 193-nm resist formulations,”  Proc. SPIE 5039,743-751 (2003).
  • Francis M Houlihan,. Andrew R Romano, David Rentkiewicz, Raj Sakamuri, Ralph R. Dammel, Will Conley, Georgia K. Rich, Daniel Miller, Larry F. Rhodes, Joseph M. McDaniels, Chun Chang,  “Evaluation of novel fluorinated resist matrices for 157-nm lithography,”  Proc. SPIE 5039, 22-32 (2003). 
  • SangHo Lee, Woo-Kyu Kim, Dalil Rahman, Takanori Kudo, Allen Timko, Clement Anyadiegwu, Douglas S. McKenzie, Takashi Kanda, Ralph R. Dammel, Munirathna Padmanaban,  “PEB sensitivity studies of ArF resist,”  Proc. SPIE 5039, 798-806 (2003).
  • Francis M Houlihan,. Raj Sakamuri, Andrew R Romano, Ralph R Dammel, Will Conley,  Georgia K Rich,. Daniel Miller, Larry F. Rhodes, Joseph M. McDaniels, Chun Chang,  “Baking study of fluorinated 157-nm resist,”  Proc. SPIE  5039,  641-649 (2003).
  • F. Houlihan, A. Romano, D. Rentkiewicz, R. Sakamuri, R.R. Dammel, W. Conley, G.Rich, D. Miller, L. Rhodes, J. McDaniel, C. Chang, “New fluorinated resins for 157 nm lithography applications,” J. Photopolymer Sci. Technol. 16(4), 581-580 (2003). 
  • M. Padmanaban, C. Anyadiegwu, T. Kanda, W.-K. Kim, T. Kudo, D. McKenzie, D. Rahman, S.H. Lee, “Influence of ArF resist components and process conditions on PEB sensitivity,” J. Photopolymer Sci. Technol. 16(4), 475-482 (2003).
  • Larry D. Seger, Chun Chang, Xiaoming Wu, Dennis A. Barnes, Larry F. Rhodes, Trevor Hoskins, Augustin Jeyakumar, Clifford L. Henderson, Ralph Dammel, “Dissolution Rate Modifiers Based on Oligomeric Norbornene Derivatives for Use in Chemically Amplified Cyclic Olefin Resists”, RETEC 2003
  • Frank Houlihan, Raj Sakamuri, David Rentkiewicz, Andrew Romano, Ralph R. Dammel, Michael Sebald, Nickolay  Stepanenko ,Christoph Hohle, Larry Rhodes, Joe McDaniel, Chun Chang Will Conley, and Daniel Miller, Toshiro Itani,  Masato Shigematsu, Etsuro Kawaguchi, “Recent Progress on New Fluorinated Resins For 157 nm Lithography,” RETEC 2004. 
  • Ralph R. Dammel, “The Role of PFOS in Resist Components”, Semiconductor International, December 2003. 
  • Houlihan, Francis M.; Sakamuri, Raj; Romano, Andrew; Rentkiewicz, David; Dammel, Ralph R.; Conley, Willard E.; Miller, Daniel A.; Sebald, Michael; Stepanenko, Nickolay; Markert, Matthias; Mierau, Uta; Vermeir, Inge; Hohle, Christoph; Itani, Toshiro; Shigematsu, Masato; Kawaguchi, Etsurou.   Recent advances in fluorinated resists for application at 157 nm.    Proceedings of SPIE-The International Society for Optical Engineering  (2004),  5376(Pt. 1, Advances in Resist Technology and Processing XXI),  134-150.  
  • Hinsberg, William; Wallraff, Gregory M.; Larson, Carl E.; Davis, Blake W.; Deline, Vaughn; Raoux, Simone; Miller, Dolores; Houle, Frances A.; Hoffnagle, John; Sanchez, Martha I.; Rettner, Charles; Sundberg, Linda K.; Medeiros, David R.; Dammel, Ralph R.; Conley, Willard E.   Liquid immersion lithography - Evaluation of resist issues.    Proceedings of SPIE-The International Society for Optical Engineering  (2004),  5376(Pt. 1, Advances in Resist Technology and Processing XXI),  21-33.  
  • Tanaka, Keiichi; Yamada, Yoshiaki; Masuda, Seiya; Kobayashi, Masakazu; Kim, Woo-Kyu; Anyadiegwu, Clement; Padmanaban, Munirathna; Dammel, Ralph R..   193 nm resist line collapse study by modifying the resist polymer and process conditions with utilizing FIRM process.    Journal of Photopolymer Science and Technology  (2004),  17(4),  527-534.  
  • Dammel, Ralph R.; Houlihan, Frank M.; Sakamuri, Raj; Rentkiewicz, David; Romano, Andrew.   193 nm immersion lithography - Taking the plunge.    Journal of Photopolymer Science and Technology  (2004),  17(4),  587-602.  
  • Houlihan, Francis; Sakamuri, Raj; Romano, Andrew; Rentkiewicz, David; Dammel, Ralph R.; Stepanenko, Nickolay; Markert, M.; Vermeir, U. Mierau Inge.; Hohle, Christoph; Conley, Will; Miller, Daniel; Itani, Toshiro; Shigematsu, Masato; Kawaguchi, Etsuro.   Recent advances in the design of resist materials for 157 nm lithography.    Journal of Photopolymer Science and Technology  (2004),  17(4),  621-630.  
  • Hong, Chi-Sun; Lee, Sang-Ho; Kim, Woo-Kyu; Kudo, Takanori; Timko, Allen; Mckenzie, Douglas; Anyadiegwu, Clement; Rahman, Dalil M.; Lin, Guanyang; Dammel, Ralph R.; Padmanaban, Munirathna.   PEB sensitivity studies of ArF resists (II): Polymer and solvent effects.    Proceedings of SPIE-The International Society for Optical Engineering  (2004),  5376(Pt. 2, Advances in Resist Technology and Processing XXI),  1131-1137.  
  • Masuda, Seiya; Kobayashi, Masakazu; Kim, Woo-Kyu; Anyadiegwu, Clement; Padmanaban, Munirathna; Dammel, Ralph R.; Tanaka, Keiichi; Yamada, Yoshiaki.   Effect of the rinse solution to avoid 193-nm resist line collapse: a study for modification of resist polymer and process conditions.    Proceedings of SPIE-The International Society for Optical Engineering  (2004),  5376(Pt. 2, Advances in Resist Technology and Processing XXI),  819-829.  
  • Houlihan, Francis; Sakamuri, Raj; Romano, Andrew; Rentkiewicz, David; Dammel, Ralph R.; Conley, Will; Miller, Daniel; Sebald, Micahel; Stepanenko, Nickolay; Markert, M.; Mierau, U.; Vermeir, Inge; Hohle, Christoph; Itani, Toshiro; Shigematsu, Masato; Kawaguchi, Etsuro.   Fluorinated resists for application at 157 nm: Recent advances.    PMSE Preprints  (2004),  91  143-147.  
  • Raub, Alex K.; Frauenglass, A.; Brueck, S. R. J.; Conley, Will; Dammel, Ralph; Romano, Andy; Sato, Mitsuru; Hinsberg, William.   Imaging capabilities of resist in deep-ultraviolet liquid immersion interferometric lithography.    Journal of Vacuum Science & Technology, B: Microelectronics and Nanometer Structures--Processing, Measurement, and Phenomena  (2004),  22(6),  3459-3464.  
  • Wei, Yayi; Stepanenko, Nickolay; Sebald, Michael; Hohle, Christoph; Houlihan, Francis M.; Sakamuri, Raj; Dimerli, Alla; Romano, Andrew; Dammel, Ralph R..   Study of 157 nm resists with full field exposure tools.    Proceedings of SPIE-The International Society for Optical Engineering  (2005),  5753(Pt. 1, Advances in Resist Technology and Processing XXII),  572-583.  
  • Conley, Will; LeSuer, Robert J.; Fan, Frank F.; Bard, Allen J.; Taylor, Chris; Tsiartas, Pavlos; Willson, Grant; Romano, Andrew; Dammel, Ralph.   Understanding the photoresist surface-liquid interface for ArF immersion lithography.    Proceedings of SPIE-The International Society for Optical Engineering  (2005),  5753(Pt. 1, Advances in Resist Technology and Processing XXII),  64-77.  
  • Houlihan, Francis; Kim, Wookyu; Sakamuri, Raj; Hamilton, Keino; Dimerli, Alla; Abdallah, David; Romano, Andrew; Dammel, Ralph R.; Pawlowski, Georg; Raub, Alex; Brueck, Steve.   Study of barrier coats for application in immersion 193-nm lithography.    Proceedings of SPIE-The International Society for Optical Engineering  (2005),  5753(Pt. 1, Advances in Resist Technology and Processing XXII),  78-94.  
  • Padmanaban, Munirathna; Rentkiewicz, David; Lee, SangHo; Hong, Chisun; Lee, Dongkwan; Rahman, Dalil; Sakamuri, Raj; Dammel, Ralph R..   Effect of hard bake process on LER.    Proceedings of SPIE-The International Society for Optical Engineering  (2005),  5753(Pt. 2, Advances in Resist Technology and Processing XXII),  862-869.  
  • Dammel, Ralph R.; Pawlowski, Georg; Romano, Andrew; Houlihan, Frank M.; Kim, Woo-Kyu; Sakamuri, Raj; Abdallah, David.   Resist component leaching in 193-nm immersion lithography.    Proceedings of SPIE-The International Society for Optical Engineering  (2005),  5753(Pt. 1, Advances in Resist Technology and Processing XXII),  95-101.  
  • Abdallah, David J.; Neisser, Mark; Dammel, Ralph R.; Pawlowski, Georg; Ding, S.; Houlihan, Francis M.; Romano, Andrew R.; Biafore, J. J.; Raub, Alex.   193nm dual layer organic B.A.R.C.s for high NA immersion lithography.    Proceedings of SPIE-The International Society for Optical Engineering  (2005),  5753(Pt. 1, Advances in Resist Technology and Processing XXII),  417-435.  
  • Houlihan, Francis; Sakamuri, Raj; Hamilton, Keino; Dimerli, Alla; Rentkiewicz, David; Romano, Andrew; Dammel, Ralph R.; Wei, Yayi; Stepanenko, Nickolay; Sebald, Michael; Hohle, Christoph; Conley, Will; Miller, Daniel; Itani, Toshiro; Shigematsu, Masato; Kawaguchi, Etsuro.   Study of barrier coats for protection against airborne contamination in 157-nm lithography.    Proceedings of SPIE-The International Society for Optical Engineering  (2005),  5753(Pt. 2, Advances in Resist Technology and Processing XXII),  1136-1149.  
  • Padmanaban, Munirathna; Rentkiewicz, David; Hong, Chisun; Lee, Dongkwan; Rahman, Dalil; Sakamuri, Raj; Dammel, Ralph R..   Possible origins and some methods to minimize LER.    Journal of Photopolymer Science and Technology  (2005),  18(4),  451-456.  
  • Dammel, Ralph R.; Pawlowski, Georg; Romano, Andrew; Houlihan, Frank M.; Kim, Woo-Kyu; Sakamuri, Raj; Abdallah, David; Padmanaban, Munirathna; Rahman, M. Dalil; McKenzie, Douglas.   Leaching phenomena and their suppression in 193 nm immersion lithography.    Journal of Photopolymer Science and Technology  (2005),  18(5),  593-602.  
  • Raub, Alex K.; Frauenglass, Andrew; Brueck, Steven R. J.; Conley, Will; Dammel, Ralph R.; Romano, Andy; Sato, Mitsuru; Hinsberg, William.   Deep-UV immersion interferometric lithography.    Proceedings of SPIE-The International Society for Optical Engineering  (2004),  5377(Pt. 1, Optical Microlithography XVII),  306-318. 
  • Rahman, M. Dalil; Chakrapani, Srivanisan; Anyadiegwu, Clement; Lin, Guanyang; Timko, Allen; Houlihan, Frank; Rentkiewicz, David; Kudo, Takanori; McKenzie, Douglas; Dammel, Ralph; Padmanaban, Munirathna.   193 nm resist composition using hybrid copolymers of cycloolefin/maleic anhydride (COMA)/methacrylate.    Proceedings of SPIE-The International Society for Optical Engineering  (2006),  6153(Pt. 1, Advances in Resist Technology and Processing XXIII),  615327/1-615327/8.  
  • Dammel, Ralph R..   Advances in polymers for photoresists and photodefinable electronic materials.    PMSE Preprints  (2006),  94  870.  
  • Padmanaban, Munirathna; Romano, Andrew; Lin, Guanyang; Chiu, Simon; Timko, Allen; Houlihan, Frank; Rahman, Dalil; Chakrapani, S.; Kudo, T.; Dammel, Ralph R.; Turnquest, Karen; Rich, Georgia; Schuetter, Scott D.; Shedd, Timothy A.; Nellis, Gregory F.   Performance of a dry 193nm resist under wet conditions.    Proceedings of SPIE-The International Society for Optical Engineering  (2006),  6153(Pt. 1, Advances in Resist Technology and Processing XXIII),  615307/1-615307/11.  
  • Houlihan, Francis M.; Rentkiewicz, David; Lin, Guanyang; Rahman, Dalil; Mackenzie, Douglas; Timko, Allen; Kudo, Takanori; Anyadiegwu, Clement; Thiyagarajan, Muthiah; Chiu, Simon; Romano, Andrew; Dammel, Ralph R.; Padmanaban, Munirathna.   Study of the effect of amine additives on LWR and LER.    Proceedings of SPIE-The International Society for Optical Engineering  (2006),  6153(Pt. 1, Advances in Resist Technology and Processing XXIII),  615317/1-615317/10.  
  • Kudo, Takanori; Lin, Guanyang; Lee, Dongkwan; Rahman, Dalil; Timko, Allen; Mckenzie, Douglas; Anyadiegwu, Clement; Chiu, Simon; Houlihan, Frank; Rentkiewicz, David; Dammel, Ralph R.; Padmanaban, Munirathna; Biafore, John.   Versatility in lithographic performance of advanced 193 nm contact hole resist.    Proceedings of SPIE-The International Society for Optical Engineering  (2006),  6153(Pt. 2, Advances in Resist Technology and Processing XXIII),  61532C/1-61532C/9.  
  • Houlihan, Francis M.; Rentkiewicz, David; Lin, Guanyang; Rahman, Dalil; Mackenzie, Douglas; Timko, Allen; Kudo, Takanori; Anyadiegwu, Clement; Thiyagarajan, Muthiah; Chiu, Simon; Romano, Andrew; Dammel, Ralph R.; Padmanaban, Munirathna.   Effect of amine additives on LWR and LER as studied by extraction parameters.    Journal of Photopolymer Science and Technology  (2006),  19(3),  327-334
  • Padmanaban, Munirathna; Romano, Andrew; Lin, Guanyang; Chiu, Simon; Timko, Allen; Houlihan, Frank; Rahman, Dalil; Dammel, Ralph R.; Turnquest, Karen; Rich, Georgia; Schuetter, Scott D.; Shedd, Timothy A.; Nellis, Gregory A.   Responding to the challenge: materials design for immersion lithography.    Journal of Photopolymer Science and Technology  (2006),  19(4),  555-563.  
  • Schuetter, S.; Shedd, T.; Nellis, G.; Romano, A.; Dammel, R.; Padmanaban, M.; Houlihan, F.; Krawicz, A.; Lin, G.; Rahman, D.; Chakrapani, S.; Neisser, M.; Van Peski, C.   Effect of resist surface characteristics on film-pulling velocity in immersion lithography.    Journal of Vacuum Science & Technology, B: Microelectronics and Nanometer Structures--Processing, Measurement, and Phenomena  (2006),  24(6),  2798-2802.
  • Abdallah, D. J.; McKenzie, D.; Timko, A.; Dioses, A.; Houlihan, F.; Rahman, D.; Miyazaki, S.; Zhang, R.; Kim, W.; Wu, H.; Pylneva, L.; Lu, P.-H.; Neisser, M.; Dammel, R. R.; Biafore, J. J.   Spin-on tri-layer approaches to high NA 193-nm lithography.    Proceedings of SPIE-The International Society for Optical Engineering  (2007),  6519(Pt. 1, Advances in Resist Materials and Processing Technology XXIV),  65190M/1-65190M/13. 
  • Kudo, Takanori; Chakrapani, Srinivasan; Lin, Guanyang; Anyadiegwu, Clement; Antonio, Charito; Parthasarathy, Deepa; Dammel, Ralph R.; Padmanaban, Munirathna.   Some non-resist component contributions to LER and LWR in 193-nm lithography.    Proceedings of SPIE-The International Society for Optical Engineering  (2007),  6519(Pt. 2, Advances in Resist Materials and Processing Technology XXIV),  651941/1-651941/12.  
  • Dammel, Ralph R.; Rahman, M. Dalil; McKenzie, Douglas; Rentkiewicz, David; Kudo, Takanori; Padmanaban, Munirathna; van Werden, Karl.   Carborane-based photoacid generators: new superacids for 193 nm and EUV lithography.    Journal of Photopolymer Science and Technology  (2007),  20(5),  627-635. 
  • Abdallah, D. J.; Mckenzie, D.; Timko, A.; Dioses, A.; Houlihan, F.; Rahman, D.; Miyazaki, S.; Zhang, R.; Kim, W.; Wu, H.; Pylneva, L.; Lu, P.-H.; Neisser, M.; Dammel, R. R..   Spin-on trilayer approaches to high NA 193nm lithography.    Journal of Photopolymer Science and Technology  (2007),  20(5),  697-705.  
  • Padmanaban, Munirathna; Chakrapani, Srinivasan; Lin, Guanyang; Kudo, Takanori; Parthasarathy, Deepa; Anyadiegwu, Clement; Antonio, Charito; Dammel, Ralph; Liu, Shenggao; Lam, Frederick; Maehara, Takayuki; Iwasaki, Fumiaki; Yamaguchi, Masao.   Novel diamantane polymer platform for resist applications.    Journal of Photopolymer Science and Technology  (2007),  20(5),  719-728. 
  • Abdallah, David J.; Miyazaki, Shinji; Hishida, Aritaka; Timko, Allen; McKenzie, Douglas; Rahman, Dalil; Kim, WooKyu; Pylneva, Lyudmila; Wu, Hengpeng; Zhang, Ruzhi; Lu, Ping-Hung; Neisser, Mark; Dammel, Ralph.   Etching spin-on trilayer masks.    Proceedings of SPIE  (2008),  6923(Pt. 1, Advances in Resist Materials and Processing Technology XXV),  69230U/1-69230U/8.  
  • Abdallah, David J.; Alemy, Eric; Chakrapani, Srinivasan; Padmanaban, Munirathna; Dammel, Ralph R..   A novel resist freeze process for double imaging.    Journal of Photopolymer Science and Technology  (2008),  21(5),  655-663. 
  • Yao, Huirong; Cho, JoonYeon; Yin, Jian; Mullen, Salem; Lin, Guanyang; Neisser, Mark; Dammel, Ralph.   Bottom anti-reflective coating for hyper NA process: theory, application and material development.    Proceedings of SPIE  (2008), 7140(Pt. 2, Lithography Asia 2008),  71402X/1-71402X/9. 
  • Lee, Dong-Kwan; Cao, Yi; Abdallah, David; Yin, Jian; Thiyagarajan, Muthiah; Dammel, Ralph R..   Freezing materials for double patterning.    Journal of Photopolymer Science and Technology  (2009),  22(5),  653-661.  
  • Abdallah, David J.; Sagan, John; Kurosawa, Kazunori; Li, Jin; Takano, Yusuke; Shimizu, Yasuo; Shinde, Ninad; Nagahara, Tatsuro; Ishikawa, Tomonori; Dammel, Ralph R..   Image reversal trilayer process using standard positive photoresist.    Proceedings of SPIE  (2009),  7273(Pt. 2, Advances in Resist Materials and Processing Technology XXVI),  72732K/1-72732K/9.  
  • Dammel, Ralph R.; Takano, Yusuke; Collett, Richard; Abdallah, David J.   Double imaging with resist freezing in a vapor reaction chamber.    Proceedings of SPIE  (2009),  7273(Pt. 1, Advances in Resist Materials and Processing Technology XXVI),  72731F/1-72731F/8. 
  • Abdallah, David J.; Kurosawa, Kazunori; Wolfer, Elizabeth; Monreal, Victor; Dalil Rahman, M.; Lee, DongKwan; Neisser, Mark; Dammel, Ralph R.; Chen, Alek C.; Han, Woo-Sung; et al., Image reversal trilayer materials for lithographic patterning and processing. Proceedings of SPIE (2009), 7520(Lithography Asia), 75200L/1-75200L/12.
  • Dammel, Ralph R., Cost-effective sub-20 nm lithography: smart chemicals to the rescue, Journal of Photopolymer Science and Technology (2011), 24(1), 33-42

Patents And Patent Applications (as listed in Chemical Abstracts):

  • Doessel, Karl Friedrich; Dammel, Ralph; Lingnau, Juergen.   Positive-working radiation-sensitive mixture and recording material for high-energy radiation therefrom.    Ger. Offen.  (1989),     5 pp.  CODEN: GWXXBX  DE  3821585  A1  19890323  CAN 111:105813  AN 1989:505813    CAPLUS   (Copyright (C) 2007 ACS on SciFinder (R))
  • Vicari, Richard; Aslam, Mohammad; Ray, Wilson B.; Davenport, Kenneth G.; Dammel, Ralph; Doessel, Karl Friedrich; Lingnau, Juergen.   Preparation of 3-mono- and 3,5-disubstituted-4-acetoxy- and -4-hydroxystyrenes.    Eur. Pat. Appl.  (1989),     11 pp.  CODEN: EPXXDW  EP  307751  A2  19890322  CAN 111:115911  AN 1989:515911    CAPLUS   (Copyright (C) 2007 ACS on SciFinder (R))
  • Vicari, Richard; Gordon, Douglas J.; Rupp, Raymond W.; Dammel, Ralph; Doessel, Karl Friedrich; Lingnau, Juergen; Lockard, James P.; Aslam, Mohammed; Ray, Wilson B.; Davenport, Kenneth G.   Preparation and use of polymers from 3-mono- and 3,5-disubstituted-4-acetoxystyrenes and 4-hydroxystyrenes.    Eur. Pat. Appl.  (1989),     21 pp.  CODEN: EPXXDW  EP  307752  A2  19890322  CAN 111:115942  AN 1989:515942    CAPLUS   (Copyright (C) 2007 ACS on SciFinder (R))
  • Doessel, Karl Friedrich; Dammel, Ralph; Lingnau, Juergen.   Positive-working radiation-sensitive mixture and radiation-sensitive recording material therefrom.    Ger. Offen.  (1989),     9 pp.  CODEN: GWXXBX  DE  3730787  A1  19890323  CAN 111:144125  AN 1989:544125    CAPLUS   (Copyright (C) 2007 ACS on SciFinder (R))
  • Dossel, Karl Friedrich; Dammel, Ralph; Lingnau, Jurgen; Schmitt, Axel.   Positive-working radiation-sensitive compositions.    Eur. Pat. Appl.  (1989),     11 pp.  CODEN: EPXXDW  EP  335219  A2  19891004  CAN 112:189021  AN 1990:189021    CAPLUS   (Copyright (C) 2007 ACS on SciFinder (R))
  • Dammel, Ralph; Doessel, Karl Friedrich; Lingnau, Juergen; Theis, Juergen.   Radiation-hardenable mixture and negative-working radiation-sensitive resist material for high energy radiation therefrom.    Ger. Offen.  (1989),     9 pp.  CODEN: GWXXBX  DE  3821584  A1  19891228  CAN 113:68390  AN 1990:468390    CAPLUS   (Copyright (C) 2007 ACS on SciFinder (R))
  • Aslam, Mohammed; Vicari, Richard; Dammel, Ralph; Dossel, Karl Friedrich; Lingnau, Jurgen; Ray, Wilson B.; Davenport, Kenneth G.   Manufacture of of poly(3-mono or 3,5-disubstituted-4-acetoxystyrenes) and their copolymers, and hydrolysis thereof.    Eur. Pat. Appl.  (1990),     14 pp.  CODEN: EPXXDW  EP  353339  A2  19900207  CAN 113:153277  AN 1990:553277    CAPLUS   (Copyright (C) 2007 ACS on SciFinder (R))
  • Dammel, Ralph; Lingnau, Juergen; Pawlowski, Georg; Theis, Juergen.   Radiation-hardenable mixture and radiation-sensitive recording material for high energy radiation therefrom.    Ger. Offen.  (1990),     10 pp.  CODEN: GWXXBX  DE  3907953  A1  19900913  CAN 114:33154  AN 1991:33154    CAPLUS   (Copyright (C) 2007 ACS on SciFinder (R))
  • Aslam, Mohammad; Vicari, Richard; Dammel, Ralph; Lingnau, Juergen; Doessel, Karl Friedrich.   Process for the production of 3-mono or 3,5-disubstituted-4-acetoxystyrene its polymerization, and hydrolysis.    U.S.  (1989),     8 pp.  CODEN: USXXAM  US  4868256  A  19890919  CAN 114:43764  AN 1991:43764    CAPLUS   (Copyright (C) 2007 ACS on SciFinder (R))
  • Wilharm, Peter; Merrem, Hans Joachim; Pawlowski, Georg; Dammel, Ralph.   Positively working radiation-sensitive mixture containing a multifunctional alpha-diazo-beta-keto ester, process for its preparation and a radiation-sensitive recording material containing this mixture.    Eur. Pat. Appl.  (1990),     32 pp.  CODEN: EPXXDW  EP  378067  A2  19900718  CAN 114:174933  AN 1991:174933    CAPLUS   (Copyright (C) 2007 ACS on SciFinder (R))
  • Dammel, Ralph; Lingnau, Juergen; Pawlowski, Georg; Theis, Juergen.   High-energy radiation-senstive positive-working composition for recording material.    Ger. Offen.  (1990),     11 pp.  CODEN: GWXXBX  DE  3907954  A1  19900913  CAN 114:237655  AN 1991:237655    CAPLUS   (Copyright (C) 2007 ACS on SciFinder (R))
  • Kaempf, Guenther; Feldhues, Michael; Scheunemann, Ude; Lingnau, Juergen; Dammel, Ralph.   Electrically conductive electron-beam-resist compositions.    Ger. Offen.  (1990),     7 pp.  CODEN: GWXXBX  DE  3903421  A1  19900809  CAN 115:18609  AN 1991:418609    CAPLUS   (Copyright (C) 2007 ACS on SciFinder (R))
  • Pawlowski, Georg; Merrem, Hans Joachim; Lingnau, Juergen; Dammel, Ralph; Roeschert, Horst.   Positive-working radiation-sensitive mixture and recording material prepared therefrom.    Ger. Offen.  (1991),     10 pp.  CODEN: GWXXBX  DE  3930087  A1  19910314  CAN 115:146636  AN 1991:546636    CAPLUS   (Copyright (C) 2007 ACS on SciFinder (R))
  • Pawlowski, Georg; Merrem, Hans Joachim; Lingnau, Juergen; Dammel, Ralph.   Positive-working radiation-sensitive mixture and recording material prepared therefrom.    Eur. Pat. Appl.  (1991),     13 pp.  CODEN: EPXXDW  EP  417557  A2  19910320  CAN 115:146637  AN 1991:546637    CAPLUS   (Copyright (C) 2007 ACS on SciFinder (R))
  • Pawlowski, Georg; Dammel, Ralph; Roeschert, Horst; SPIEss, Walter; Meier, Winfried.   Negative working photosensitive composition and imaging material containing the composition.    Ger. Offen.  (1991),     14 pp.  CODEN: GWXXBX  DE  4006190  A1  19910829  CAN 116:48930  AN 1992:48930    CAPLUS   (Copyright (C) 2007 ACS on SciFinder (R))
  • Roeschert, Horst; Pawlowski, Georg; Merrem, Hans Joachim; Dammel, Ralph.   Preparation of multifunctional compounds having alpha-diazo-beta-ketoester units and sulfonic acid ester units for use as photoactive components in radiation-sensitive mixtures.    Eur. Pat. Appl.  (1991),     50 pp.  CODEN: EPXXDW  EP  456073  A2  19911113  CAN 116:214169  AN 1992:214169    CAPLUS   (Copyright (C) 2007 ACS on SciFinder (R))
  • Roeschert, Horst; Pawlowski, Georg; Merrem, Hans Joachim; Dammel, Ralph; SPIEss, Walter.   Positive-working radiation-sensitive composition and radiation-sensitive recording material for exposure using UV-radiation.    Eur. Pat. Appl.  (1991),     26 pp.  CODEN: EPXXDW  EP  456075  A1  19911113  CAN 116:245275  AN 1992:245275    CAPLUS   (Copyright (C) 2007 ACS on SciFinder (R))
  • Roeschert, Horst; Merrem, Hans Joachim; Pawlowski, Georg; Fuchs, Juergen; Dammel, Ralph.   Radiation-sensitive polymers with naphthoquinone-2-diazide-4-sulfonyl group and their use in positive-working photosensitive compositions.    Eur. Pat. Appl.  (1992),     16 pp.  CODEN: EPXXDW  EP  501308  A1  19920902  CAN 118:136247  AN 1993:136247    CAPLUS   (Copyright (C) 2007 ACS on SciFinder (R))
  • Pawlowski, Georg; Dammel, Ralph; Roeschert, Horst; SPIEss, Walter; Eckes, Charlotte.   Acid-cleavable photosensitive compounds and their use in photosensitive compositions.    Ger. Offen.  (1992),     24 pp.  CODEN: GWXXBX  DE  4112970  A1  19921022  CAN 118:157893  AN 1993:157893    CAPLUS   (Copyright (C) 2007 ACS on SciFinder (R))
  • Roeschert, Horst; Merrem, Hans Joachim; Pawlowski, Georg; Fuchs, Juergen; Dammel, Ralph.   photosensitive polymer with 2-diazo-1,3-dicarbonyl groups for  positive-working recording material.    Eur. Pat. Appl.  (1992),     22 pp.  CODEN: EPXXDW  EP  501294  A1  19920902  CAN 118:157904  AN 1993:157904    CAPLUS   (Copyright (C) 2007 ACS on SciFinder (R))
  • Roeschert, Horst; Fuchs, Juergen; SPIEss, Walter; Eckes, Charlotte; Pawlowski, Georg; Dammel, Ralph.   Negative-working photosensitive composition and its use in recording material.    Ger. Offen.  (1992),     11 pp.  CODEN: GWXXBX  DE  4112974  A1  19921022  CAN 118:157926  AN 1993:157926    CAPLUS   (Copyright (C) 2007 ACS on SciFinder (R))
  • Pawlowski, Georg; Roeschert, Horst; SPIEss, Walter; Dammel, Ralph.   Acid-cleavable photosensitive compounds and their use in photosensitive compositions.    Ger. Offen.  (1992),     23 pp.  CODEN: GWXXBX  DE  4112968  A1  19921022  CAN 118:180050  AN 1993:180050    CAPLUS   (Copyright (C) 2007 ACS on SciFinder (R))
  • Pawlowski, Georg; Dammel, Ralph; Roeschert, Horst; SPIEss, Walter; Eckes, Charlotte.   Acid-cleavable photosensitive compounds and their use in photosensitive compositions.    Ger. Offen.  (1992),     21 pp.  CODEN: GWXXBX  DE  4112969  A1  19921022  CAN 118:222892  AN 1993:222892    CAPLUS   (Copyright (C) 2007 ACS on SciFinder (R))
  • Przybilla, Klaus Juergen; Dammel, Ralph; Pawlowski, Georg.   New polymers containing esters of (alpha),(beta)-unsaturated carboxylic acid and photosensitive compositions containing them.    Ger. Offen.  (1992),     9 pp.  CODEN: GWXXBX  DE  4106558  A1  19920903  CAN 118:222902  AN 1993:222902    CAPLUS   (Copyright (C) 2007 ACS on SciFinder (R))
  • Roeschert, Horst; Dammel, Ralph; Pawlowski, Georg; Przybilla, Klaus Juergen.   Preparation of N-tert.-butoxycarbonylmaleimide.    Eur. Pat. Appl.  (1993),     5 pp.  CODEN: EPXXDW  EP  523556  A1  19930120  CAN 118:254742  AN 1993:254742    CAPLUS   (Copyright (C) 2007 ACS on SciFinder (R))
  • Pawlowski, Georg; Dammel, Ralph; Roeschert, Horst; Meier, Winfried; SPIEss, Walter; Przybilla, Klaus Juergen.   Negative-working radiation-sensitive composition and radiation-sensitive recording material produced therewith.    Eur. Pat. Appl.  (1993),     16 pp.  CODEN: EPXXDW  EP  525625  A1  19930203  CAN 119:128416  AN 1993:528416    CAPLUS   (Copyright (C) 2007 ACS on SciFinder (R))
  • Khanna, Dinesh N.; McKenzie, Douglas; Sobodacha, Chester J.; Dammel, Ralph R..   Diazo ester of a benzolactone ring compound and positive photoresist composition and element utilizing the diazo ester.    U.S.  (1993),     7 pp.  CODEN: USXXAM  US  5221592  A  19930622  CAN 119:237993  AN 1993:637993    CAPLUS   (Copyright (C) 2007 ACS on SciFinder (R))
  • Przybilla, Klaus; Pawlowski, Georg; Dammel, Ralph; Appel, Wolfgang.   Low molecular weight acid-splittable compound with 2,2-bis-trifluoromethyl-oxaethano- group and its use.    Ger. Offen.  (1993),     10 pp.  CODEN: GWXXBX  DE  4207263  A1  19930909  CAN 120:204647  AN 1994:204647    CAPLUS   (Copyright (C) 2007 ACS on SciFinder (R))
  • Rahman, M. Dalil; Evans, Owen B.; Dammel, Ralph R.; Sobadacha, Chester J.   Positive photoresist composition.    PCT Int. Appl.  (1993),     28 pp.  CODEN: PIXXD2  WO  9318438  A1  19930916  CAN 120:232068  AN 1994:232068    CAPLUS   (Copyright (C) 2007 ACS on SciFinder (R))
  • Lu, Ping Hung; Dammel, Ralph R.; Eib, Nicholas Kiser; Ficner, Stanley A.; Khanna, Dinesh N.; Kloffenstein, Thomas J., Jr.; Lyons, Christopher F.; Plat, Marina; Rahman, M. Dalil.   Positive-working photoresist composition.    PCT Int. Appl.  (1994),     45 pp.  CODEN: PIXXD2  WO  9408275  A1  19940414  CAN 121:217668  AN 1994:617668    CAPLUS   (Copyright (C) 2007 ACS on SciFinder (R))
  • Przybilla, Klaus Juergen; Dammel, Ralph; Pawlowski, Georg; Kudo, Takanori; Masuda, Seiya; Kinoshita, Yoshiaki; Suehiro, Natsumi; Padmanaban, Munirathna; Okazaki, Hiroshi; Endo, Hajime.   Positive-working radiation-sensitive mixture.    Eur. Pat. Appl.  (1994),     21 pp.  CODEN: EPXXDW  EP  611998  A2  19940824  CAN 122:147295  AN 1995:340582    CAPLUS   (Copyright (C) 2007 ACS on SciFinder (R))
  • Dammel, Ralph R.; Evans, Owen B.   Novel matrix resin for high-temperature stable photoimageable compositions.    PCT Int. Appl.  (1994),     34 pp.  CODEN: PIXXD2  WO  9419724  A1  19940901  CAN 122:147317  AN 1995:362277    CAPLUS   (Copyright (C) 2007 ACS on SciFinder (R))
  • Rahman, M. Dalil; Aubin, Daniel P.; Durham, Dana L.; Dammel, Ralph R..   Using a Lewis base to control the molecular weight of novolak resins.    PCT Int. Appl.  (1994),     27 pp.  CODEN: PIXXD2  WO  9414862  A1  19940707  CAN 122:315404  AN 1995:586277    CAPLUS   (Copyright (C) 2007 ACS on SciFinder (R))
  • Rahman, M. Dalil; Lu, Ping-Hung; Aubin, Daniel P.; Dammel, Ralph R..   Removal of metal ions from formaldehyde and phenolic compounds used to prepare novolak resins.    PCT Int. Appl.  (1994),     38 pp.  CODEN: PIXXD2  WO  9414863  A1  19940707  CAN 122:315403  AN 1995:589344    CAPLUS   (Copyright (C) 2007 ACS on SciFinder (R))
  • Rahman, M. Dalil; Dammel, Ralph R.; Evans, Owen B.   Low-metal-ion photoactive compound for photoresist composition.    PCT Int. Appl.  (1996),     15 pp.  CODEN: PIXXD2  WO  9612214  A1  19960425  CAN 125:45137  AN 1996:394015    CAPLUS   (Copyright (C) 2007 ACS on SciFinder (R))
  • Sounik, James R.; Ficner, Stanley A.; Dammel, Ralph R.; Lu, Ping-Hung; Lynch, Thomas J.; Durham, Dana L.   Resin compositions for photoresist applications.    PCT Int. Appl.  (1997),     27 pp.  CODEN: PIXXD2  WO  9700465  A1  19970103  CAN 126:192972  AN 1997:195613    CAPLUS   (Copyright (C) 2007 ACS on SciFinder (R))
  • McCulloch, Iain; Dammel, Ralph R.; Durham, Dana L.; Lu, Ping-hung; Kang, Ming; Khanna, Dinesh N.; Ding, Shuji.   Aqueous antireflective coatings for photoresist compositions.    U.S.  (1997),     7 pp.  CODEN: USXXAM  US  5652297  A  19970729  CAN 127:183331  AN 1997:513490    CAPLUS   (Copyright (C) 2007 ACS on SciFinder (R))
  • McCulloch, Iain; Dammel, Ralph R.; Durham, Dana L.; Lu, Ping-hung.   Antireflective coatings for photoresist compositions.    U.S.  (1997),     8 pp.  CODEN: USXXAM  US  5652317  A  19970729  CAN 127:183332  AN 1997:513496    CAPLUS   (Copyright (C) 2007 ACS on SciFinder (R))
  • Spak, Mark A.; Dammel, Ralph R.; Deprado, Michael.   A process for obtaining a lift-off imaging profile.    PCT Int. Appl.  (1997),     16 pp.  CODEN: PIXXD2  WO  9733199  A1  19970912  CAN 127:285932  AN 1997:618274    CAPLUS   (Copyright (C) 2007 ACS on SciFinder (R))
  • Dammel, Ralph R.; Norwood, Robert A.   Light-absorbing antireflective layer with improved performance due to refractive index optimization for photoresist.    PCT Int. Appl.  (1997),     27 pp.  CODEN: PIXXD2  WO  9733200  A1  19970912  CAN 127:285933  AN 1997:618275    CAPLUS   (Copyright (C) 2007 ACS on SciFinder (R))
  • Dammel, Ralph R.; Norwood, Robert A.   Bottom antireflective coating through refractive index modification by anomalous dispersion.    PCT Int. Appl.  (1997),     17 pp.  CODEN: PIXXD2  WO  9733201  A1  19970912  CAN 127:285955  AN 1997:618276    CAPLUS   (Copyright (C) 2007 ACS on SciFinder (R))
  • Dammel, Ralph R.; Lu, Ping-Hung; Spak, Mark A.; Alile, Oghogho.   Thermal treatment process of positive photoresist composition.    PCT Int. Appl.  (1997),     18 pp.  CODEN: PIXXD2  WO  9733206  A1  19970912  CAN 127:285934  AN 1997:618278    CAPLUS   (Copyright (C) 2007 ACS on SciFinder (R))
  • Lu, Ping-hung; Kokinda, Elaine G.; Rahman, M. Dalil; Dammel, Ralph R.; Vicari, Richard; Sounik, James R.; Ficner, Stanley A.   Resin composition for photoresist applications.    PCT Int. Appl.  (1997),     30 pp.  CODEN: PIXXD2  WO  9734197  A1  19970918  CAN 127:301261  AN 1997:625660    CAPLUS   (Copyright (C) 2007 ACS on SciFinder (R))
  • Dammel, Ralph R.; Lu, Ping-hung; Spak, Mark A.; Alile, Oghogho.   Thermal treatment process of positive photoresist composition.    PCT Int. Appl.  (1997),     15 pp.  CODEN: PIXXD2  WO  9735231  A2  19970925  CAN 127:270479  AN 1997:640850    CAPLUS   (Copyright (C) 2007 ACS on SciFinder (R))
  • Dammel, Ralph R.; Lu, Ping-hung; Kokinda, Elaine G.; Dixit, Sunit S.   Positive photoresist composition containing 2,4-dinitro-1-naphthol.    PCT Int. Appl.  (1998),     20 pp.  CODEN: PIXXD2  WO  9806008  A1  19980212  CAN 128:198629  AN 1998:112511    CAPLUS   (Copyright (C) 2007 ACS on SciFinder (R))
  • McCulloch, Iain; Dammel, Ralph R.; Corso, Anthony J.; Ding, Shuji; Durham, Dana L.; Lu, Ping-Hung; Kang, Ming; Khanna, Dinesh N.   Antireflective coating solution for photoresist.    U.S.  (1998),     10 pp.  CODEN: USXXAM  US  5733714  A  19980331  CAN 128:288328  AN 1998:202628    CAPLUS   (Copyright (C) 2007 ACS on SciFinder (R))
  • Ding, Shuji; Khanna, Dinesh N.; Lu, Ping-hung; Shan, Jianhui; Dammel, Ralph R.; Durham, Dana L.; Rahman, M. Dalil; McCulloch, Iain.   Light-absorbing polymer.    PCT Int. Appl.  (1998),     32 pp.  CODEN: PIXXD2  WO  9849602  A1  19981105  CAN 130:8886  AN 1998:728662    CAPLUS   (Copyright (C) 2007 ACS on SciFinder (R))
  • Ding, Shuji; Lu, Ping-hung; Khanna, Dinesh N.; Shan, Jianhui; Durham, Dana L.; Dammel, Ralph R.; Rahman, M. Dalil.   Antireflective coating composition for photoresist composition.    PCT Int. Appl.  (1998),     34 pp.  CODEN: PIXXD2  WO  9849603  A1  19981105  CAN 130:8887  AN 1998:728663    CAPLUS   (Copyright (C) 2007 ACS on SciFinder (R))
  • Padmanaban, Munirathna; Dammel, Ralph R.; Ficner, Stanley A.; Oberlander, Joseph E.; Sagan, John P.   Antireflective coating for deep-UV photoresist.    PCT Int. Appl.  (2000),     32 pp.  CODEN: PIXXD2  WO  2000029906  A2  20000525  CAN 132:354748  AN 2000:351756    CAPLUS   (Copyright (C) 2007 ACS on SciFinder (R))
  • Redd, Randy D.; Dammel, Ralph R.; Sagan, John P.; Spak, Mark A.   Method for producing a pattern suitable for forming sub-micron width metal lines.    PCT Int. Appl.  (2000),     16 pp.  CODEN: PIXXD2  WO  2000055691  A1  20000921  CAN 133:259347  AN 2000:666990    CAPLUS   (Copyright (C) 2007 ACS on SciFinder (R))
  • Padmanaban, Munirathna; Dammel, Ralph R..   Photoresist composition for deep UV radiation.    PCT Int. Appl.  (2001),     20 pp.  CODEN: PIXXD2  WO  2001042853  A2  20010614  CAN 135:38898  AN 2001:435377    CAPLUS   (Copyright (C) 2007 ACS on SciFinder (R))
  • Dammel, Ralph R.; Norwood, Robert A.   Light-absorbing antireflective layers with improved performance due to refractive index optimization.    U.S.  (2001),     14 pp., Cont.-in-part of U.S. Ser. No. 811,807, abandoned.  CODEN: USXXAM  US  6274295  B1  20010814  CAN 135:160160  AN 2001:593237    CAPLUS   (Copyright (C) 2007 ACS on SciFinder (R))
  • Xu, Pingyong; Lu, Ping-Hung; Dammel, Ralph R..   Negative-acting chemically amplified photoresist composition.    PCT Int. Appl.  (2001),     18 pp.  CODEN: PIXXD2  WO  2001096960  A1  20011220  CAN 136:45690  AN 2001:924133    CAPLUS   (Copyright (C) 2007 ACS on SciFinder (R))
  • Rahman, M. Dalil; Padmanaban, Munirathna; Dammel, Ralph R..   Photoresist composition for deep UV and process thereof.    PCT Int. Appl.  (2002),     27 pp.  CODEN: PIXXD2  WO  2002006901  A2  20020124  CAN 136:142609  AN 2002:72429    CAPLUS   (Copyright (C) 2007 ACS on SciFinder (R))
  • Dammel, Ralph R.; Eakin, Ronald J.; Spak, Mark A.   Photolithographic process for manufacturing a microelectronic device using shrinkage materials.    PCT Int. Appl.  (2002),     16 pp.  CODEN: PIXXD2  WO  2002010858  A2  20020207  CAN 136:159895  AN 2002:107701    CAPLUS   (Copyright (C) 2007 ACS on SciFinder (R))
  • Dammel, Ralph R.; Sakamuri, Raj.   Polymer suitable for photoresist compositions.    PCT Int. Appl.  (2002),     31 pp.  CODEN: PIXXD2  WO  2002092651  A1  20021121  CAN 137:391070  AN 2002:888785    CAPLUS   (Copyright (C) 2007 ACS on SciFinder (R))
  • Dammel, Ralph R.; Sakamuri, Raj.   Photoresist composition for deep ultraviolet lithography.    PCT Int. Appl.  (2002),     28 pp.  CODEN: PIXXD2  WO  2002093263  A1  20021121  CAN 137:377447  AN 2002:889058    CAPLUS   (Copyright (C) 2007 ACS on SciFinder (R))
  • Lu, Ping-hung; Neisser, Mark O.; Dammel, Ralph R.; Wu, Hengpeng.   Negative-acting aqueous photoresist composition.    PCT Int. Appl.  (2003),     20 pp.  CODEN: PIXXD2  WO  2003029900  A1  20030410  CAN 138:311570  AN 2003:282851    CAPLUS   (Copyright (C) 2007 ACS on SciFinder (R))
  • Kudo, Takanori; Dammel, Ralph R.; Padmanaban, Munirathna.   Photoresist composition for deep UV radiation containing image deterioration-preventing additive.    U.S. Pat. Appl. Publ.  (2003),     6 pp.  CODEN: USXXCO  US  2003087180  A1  20030508  CAN 138:360406  AN 2003:355686    CAPLUS   (Copyright (C) 2007 ACS on SciFinder (R))
  • Kudo, Takanori; Padmanaban, Munirathna; Dammel, Ralph R.; Toukhy, Medhat A.   Negative deep ultraviolet photoresist.    U.S. Pat. Appl. Publ.  (2003),     5 pp.  CODEN: USXXCO  US  2003129527  A1  20030710  CAN 139:108700  AN 2003:532214    CAPLUS   (Copyright (C) 2007 ACS on SciFinder (R))
  • Oberlander, Joseph E.; Dammel, Ralph R.; Ding-Lee, Shuji; Neisser, Mark O.; Toukhy, Medhat A.   Positive-working photoimageable bottom antireflective coating.    U.S. Pat. Appl. Publ.  (2003),     12 pp.  CODEN: USXXCO  US  2003129531  A1  20030710  CAN 139:92770  AN 2003:532217    CAPLUS   (Copyright (C) 2007 ACS on SciFinder (R))
  • Oberlander, Joseph E.; Dammel, Ralph R.; Ding-lee, Shuji; Neisser, Mark O.; Toukhy, Medhat A.   Negative-working photoimabeable bottom antireflective coating.    PCT Int. Appl.  (2003),     35 pp.  CODEN: PIXXD2  WO  2003058345  A2  20030717  CAN 139:108711  AN 2003:551772    CAPLUS   (Copyright (C) 2007 ACS on SciFinder (R))
  • Padmanaban, Munirathna; Kudo, Takanori; Lee, Sangho; Dammel, Ralph R.; Rahman, Dalil M.   Photoresist composition for deep ultraviolet lithography comprising a mixture of photoactive compounds.    PCT Int. Appl.  (2003),     63 pp.  CODEN: PIXXD2  WO  2003107093  A2  20031224  CAN 140:50314  AN 2003:1007247    CAPLUS   (Copyright (C) 2007 ACS on SciFinder (R))
  • Padmanaban, Munirathna; Kudo, Takanori; Lee, Sangho; Dammel, Ralph R.; Rahman, M. Dalil.   Photoresist composition for deep ultraviolet lithography comprising a mixture of photoactive compounds.    U.S. Pat. Appl. Publ.  (2003),     25 pp., Cont.-in-part of U.S. Ser. No. 170,761.  CODEN: USXXCO  US  2003235782  A1  20031225  CAN 140:50320  AN 2003:1007693    CAPLUS   (Copyright (C) 2007 ACS on SciFinder (R))
  • Dammel, Ralph R.; Sakamuri, Raj.   Photoresist composition for deep ultraviolet lithography.    U.S. Pat. Appl. Publ.  (2004),     28 pp., Cont.-in-part of U.S. Ser. No. 371,262.  CODEN: USXXCO  US  2004166433  A1  20040826  CAN 141:233197  AN 2004:701690    CAPLUS   (Copyright (C) 2007 ACS on SciFinder (R))
  • Dammel, Ralph R.; Sakamuri, Raj; Houlihan, Frank.   Photoresist composition for deep ultraviolet lithography.    U.S. Pat. Appl. Publ.  (2004),     25 pp.  CODEN: USXXCO  US  2004166434  A1  20040826  CAN 141:233198  AN 2004:701691    CAPLUS   (Copyright (C) 2007 ACS on SciFinder (R))
  • Dammel, Ralph R.; Meyer, Stephen; Spak, Mark A.   Photoresist composition for imaging thick films.    U.S. Pat. Appl. Publ.  (2004),     8 pp.  CODEN: USXXCO  US  2004185368  A1  20040923  CAN 141:304279  AN 2004:780215    CAPLUS   (Copyright (C) 2007 ACS on SciFinder (R))
  • Hohle, Christoph; Dammel, Ralph; Houlihan, Michael Francis.   Photoresist for 157 nm photolithography from a polymer based on fluoridated norbornene derivatives.    Ger. Offen.  (2005),     8 pp.  CODEN: GWXXBX  DE  10350685  A1  20050616  CAN 143:44206  AN 2005:516121    CAPLUS   (Copyright (C) 2007 ACS on SciFinder (R))
  • Dammel, Ralph R..   Photoresist composition.    U.S. Pat. Appl. Publ.  (2005),     23 pp.  CODEN: USXXCO  US  2005147915  A1  20050707  CAN 143:123042  AN 2005:588324    CAPLUS   (Copyright (C) 2007 ACS on SciFinder (R))
  • Houlihan, Francis M.; Dammel, Ralph R.; Romano, Andrew R.; Sakamuri, Raj.   Process of imaging a deep ultraviolet photoresist with a top coating and materials thereof.    U.S. Pat. Appl. Publ.  (2005),     27 pp., Cont.-in-part of U.S. Ser. No. Ser. 875,596.  CODEN: USXXCO  US  2005202340  A1  20050915  CAN 143:315450  AN 2005:1004239    CAPLUS   (Copyright (C) 2007 ACS on SciFinder (R))
  • Houlihan, Francis M.; Dammel, Ralph R.; Romano, Andrew R.; Sakamuri, Raj.   Process of imaging a deep ultraviolet photoresist with a top coating and materials thereof.    U.S. Pat. Appl. Publ.  (2005),     22 pp.  CODEN: USXXCO  US  2005202351  A1  20050915  CAN 143:315451  AN 2005:1004246    CAPLUS   (Copyright (C) 2007 ACS on SciFinder (R))
  • Houlihan, Francis M.; Dammel, Ralph R.; Romano, Andrew R.; Sakamuri, Raj.   Process of imaging deep UV photoresist with top coating and materials thereof.    U.S. Pat. Appl. Publ.  (2005),     25 pp., Cont.-in-part of U.S. Ser. No. 796,376.  CODEN: USXXCO  US  2005202347  A1  20050915  CAN 143:315454  AN 2005:1005877    CAPLUS   (Copyright (C) 2007 ACS on SciFinder (R))
  • Dammel, Ralph R.; Meyer, Stephen; Spak, Mark A.   Aqueous edge bead remover.    U.S. Pat. Appl. Publ.  (2005),     5 pp.  CODEN: USXXCO  US  2005282093  A1  20051222  CAN 144:79469  AN 2005:1335715    CAPLUS   (Copyright (C) 2007 ACS on SciFinder (R))
  • Kudo, Takanori; Padmanaban, Munirathna; Dammel, Ralph R..   Composition for coating over a photoresist pattern.    U.S. Pat. Appl. Publ.  (2006),     9 pp.  CODEN: USXXCO  US  2006088788  A1  20060427  CAN 144:442645  AN 2006:390681    CAPLUS   (Copyright (C) 2007 ACS on SciFinder (R))
  • Houlihan, Francis M.; Dammel, Ralph R.; Romano, Andrew R.; Padmanaban, Munirathna; Rahman, M. Dalil.   Photoresist composition for deep UV and process thereof.    U.S. Pat. Appl. Publ.  (2006),     24 pp.  CODEN: USXXCO  US  2006110677  A1  20060525  CAN 145:17777  AN 2006:490030    CAPLUS   (Copyright (C) 2007 ACS on SciFinder (R))
  • Abdallah, David J.; Neisser, Mark O.; Dammel, Ralph R.; Pawlowski, Georg; Biafore, John; Romano, Andrew R.; Kim, Wookyu.   Process of imaging a photoresist with multiple antireflective coatings for deep UV lithography.    U.S. Pat. Appl. Publ.  (2006),     12pp., Cont.-in-part of U.S. Ser. No.54,723.  CODEN: USXXCO  US  2006177774  A1  20060810  CAN 145:238188  AN 2006:796436    CAPLUS   (Copyright (C) 2007 ACS on SciFinder (R))
  • Abdallah, David J.; Neisser, Mark O.; Dammel, Ralph R.; Pawlowski, Georg; Biafore, John; Romano, Andrew R.   Process of imaging a photoresist with multiple antireflective coatings for deep UV lithography.    U.S. Pat. Appl. Publ.  (2006),     11pp.  CODEN: USXXCO  US  2006177772  A1  20060810  CAN 145:238222  AN 2006:796437    CAPLUS   (Copyright (C) 2007 ACS on SciFinder (R))
  • Rahman, M. Dalil; Houlihan, Francis M.; Padmanaban, Munirathna; Lee, Sangho; Dammel, Ralph R.; Rentkiewicz, David; Anyadiegwu, Clement.   Photoactive compounds.    PCT Int. Appl.  (2007),     89pp.  CODEN: PIXXD2  WO  2007007175  A2  20070118  AN 2007:63540    CAPLUS   (Copyright (C) 2007 ACS on SciFinder (R))
  • Rahman, M. Dalil; Houlihan, Francis M.; Padmanaban, Munirathna; Lee, Sangho; Dammel, Ralph R.; Rentkiewicz, David; Anyadiegwu, Clement.   Photoactive compounds.    U.S. Pat. Appl. Publ.  (2007),     36pp., Cont.-in-part of U.S. Ser. No. 179886, abandoned.  CODEN: USXXCO  US  2007015084  A1  20070118  AN 2007:63541    CAPLUS   (Copyright (C) 2007 ACS on SciFinder (R))
  • Abdallah, David J.; Dammel, Ralph R..   Antireflective coating compositions.    U.S. Pat. Appl. Publ.  (2008),     22pp.  CODEN: USXXCO  US  2008076059  A1  20080327  CAN 148:414241  AN 2008:374668    CAPLUS
  • Padmanaban, Munirathna; Chakrapani, Srinivasan; Dammel, Ralph R..   Polymers useful in photoresist compositions and compositions thereof.    U.S. Pat. Appl. Publ.  (2008),     22pp.  CODEN: USXXCO  US  2008171270  A1  20080717  
  • Zhang, Ruzhi; Kim, Wookyu; Abdallah, David; Lu, Pinghung; Neisser, Mark; Dammel, Ralph R.; Karkkainen, Ari.   Silicone-based antireflective coating compositions.    PCT Int. Appl.  (2008),     39pp.  CODEN: PIXXD2  WO  2008104881  A1  20080904  
  • Thiyagarajan, Muthiah; Dammel, Ralph R.; Cao, Yi; Hong, Sungeun; Kang, Wenbing; Anyadiegwu, Clement.   Composition for coating over a photoresist pattern comprising a lactam.    U.S. Pat. Appl. Publ.  (2008),     13pp.  CODEN: USXXCO  US  2008248427  A1  20081009  AN 2008:1220120    CAPLUS
  • Dammel, Ralph. R.; Kang, Wenbing; Shimizu, Yasuo; Ishikawa, Tomonori.   Composition for forming silicon-containing fine pattern and method for forming fine pattern using the same.    PCT Int. Appl.  (2009),     18pp.  CODEN: PIXXD2  WO  2009035087  A1  20090319  
  • Abdallah, David J.; Dammel, Ralph R.; Monreal, Victor.   Process for shrinking dimensions between photoresist pattern comprising a pattern hardening step.    PCT Int. Appl.  (2009),     32pp.; Chemical Indexing Equivalent to 151:438402 (US).  CODEN: PIXXD2  WO  2009122276  A1  20091008  CAN 151:438355  AN 2009:1230613    CAPLUS
  • Dammel, Ralph R.; Abdallah, David J.; Alemy, Eric; Padmanaban, Munirathna.   A photoresist image-forming process using double patterning with hardening treatment for semiconductor materials.    PCT Int. Appl.  (2009),     31pp.  CODEN: PIXXD2  WO  2009122275  A1  20091008  
  • Dammel, Ralph R.; Abdallah, David; Alemy, Eric; Padmanaban, Munirathna.   Photoresist image-forming process using double patterning.    U.S. Pat. Appl. Publ.  (2009),     11 pp.  CODEN: USXXCO  US  2009253080  A1  20091008  
  • Abdallah, David; Dammel, Ralph R..   Spin-on graded k silicon antireflective coating.    U.S. Pat. Appl. Publ.  (2009),     10pp.; Chemical Indexing Equivalent to 151:540334 (WO).  CODEN: USXXCO  US  2009274974  A1  20091105  
  • Thiyagarajan, Muthiah; Cao, Yi; Hong, Sung Eun; Dammel, Ralph R..   Aqueous composition for coating over photoresist pattern.    PCT Int. Appl.  (2009),     40pp.; Chemical Indexing Equivalent to 152:86834 (US).  CODEN: PIXXD2  WO  2009153648  A1  20091223  CAN 152:86826  AN 2009:1597588    CAPLUS
  • Yao, Huirong; Lin, Guanyang; Yin, Jian; Wu, Hengpeng; Neisser, Mark; Dammel, Ralph.  Nonaromatic polymer-based antireflective coating compositions. U.S. Pat. Appl. Publ. (2010), US 20100009297 A1 20100114. PCT Int. Appl.  (2010), WO  2010004378  A1  20100114. 
  • Dammel, Ralph R.; Chakrapani, Srinivasan; Padmanaban, Munirathna; Miyazaki, Shinji; Ng, Edward W.; Kudo, Takanori; Dioses, Alberto D.; Houlihan, Francis M., Positive-working photoimaging bottom antireflective coating , U.S. Pat. Appl. Publ. (2011), US 20110086312 A1 20110414. 
  • P92) Abdallah, David J.; Dammel, Ralph R.; Takano, Yusuke; Li, Jin; Kurosawa, Kazunori,  Hardmask process for forming a reverse tone image using polysilazane in microelectronic device fabrication, PCT Int. Appl. (2010), WO 2010092420 A1 20100819; U.S. Pat. Appl. Publ. (2010), US 20100203299 A1 20100812.
  • Abdallah, David J.; Dammel, Ralph R.; Neisser, Mark. Hardmask process for forming a reverse tone image. U.S. Pat. Appl. Publ. (2010), US 20100040838 A1 20100218.
  • Dammel, Ralph R.; Chakrapani, Srinivasan; Padmanaban, Munirathna; Miyazaki, Shinji; Ng, Edward W.; Kudo, Takanori; Dioses, Alberto D.; Houlihan, Francis M. Positive-working photoimaging bottom antireflective coating.   PCT Int. Appl. (2011), WO 2011042770 A1 20110414.
  • Dammel, Ralph. R.; Kang, Wenbing; Shimizu, Yasuo; Ishikawa, Tomonori. Composition for forming silicon-containing fine pattern and method for forming fine pattern using the same. Jpn. Tokkyo Koho (2012), JP 5058733 B2 20121024.
  • Thiyagarajan, Muthiah; Dammel, Ralph R.; Cao, Yi; Hong, Sungeun; Kang, Wenbing; Anyadiegwu, Clement. Composition for coating over a photoresist pattern comprising a lactam. U.S. Pat. Appl. Publ. (2012), US 20120219919 A1 20120830.
  • Neisser, Mark O.; Chakrapani, Srinivasan; Padmanaban, Munirathna; Dammel, Ralph R. Polymer/solvent edge bead remover for coatings. U.S. Pat. Appl. Publ. (2012), US 20120108067 A1 20120503. 
  • Hirahara, Eri; Dammel, Ralph; Pawlowski, Georg.  N-(haloalkylsulfonyloxy)- or (haloarylsulfonyloxy)-1,8-naphthalimides and their manufacture. PCT Int. Appl. (2014), WO 2014073409 A1 20140515
  • Zhang, Ruzhi; Kim, Wookyu; Abdallah, David J.; Lu, Pinghung; Neisser, Mark O.; Dammel, Ralph R.; Karkkainen, Ari. Silicon-based antireflective coating compositions. US 8524441 B2 20130903.
  • Wright, Charles Warren; Dammel, Ralph Rainer. Fluorinated photopolymer with integrated anthracene sensitizer. US 20140356789 A1 20141204.

Not listed in Chemical Abstracts: 

  1. Copolymers of 4-Hydroxystyrene and Alkyl Substituted 4-Hydroxystyrene. Vicari, Richard; Gordon, Douglas J.; Hinsberg, William D., McKean, Dennis; Willson, Carlton G.; Dammel, Ralph; US Patent 5,807,947 (Sept. 15, 1998).
  2. Copolymers of 4-hydroxystyrene and alkyl substituted-4-hydroxystyrene in admixture with a photosensitizer to form a photosensitive composition. Vicari, Richard; Gordon, Douglas J.; Hinsberg, William D., McKean, Dennis; Willson, Carlton G.; Dammel, Ralph;  U.S. 5342727 (Aug. 30, 1994).

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