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Deposition

GASGUARD Gas Delivery Systems Our GASGUARD® Gas Delivery Systems product line includes automatic, semi-automatic and manual systems in a variety of configurations, from a single-source system to a three-cylinder source system and purge system. The different models can accommodate a full range of hazardous gases: flammable, pyrophoric, corrosives, toxics and highly-toxics, all tailored to meet your needs.

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Airopak F2/N2 10% Fluorine in Nitrogen Mixture – Commercial Grade We have a long history as the world’s leading provider of Airopak® fluorine gas mixtures for surface modification of plastics and fluoropolymers. Airopak F2/N2 mixtures create barrier properties or alter surface activation of the treated plastic surfaces. We supply 10% and 20% fluorine nitrogen (F2/N2) gas mixtures in individual cylinders and bulk tube trailers globally. Our expert technical service group…

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Airopak F2/N2 20% Fluorine in Nitrogen Mixture – Commercial Grade We have a long history as the world’s leading provider of Airopak® fluorine gas mixtures for surface modification of plastics and fluoropolymers. Airopak F2/N2 fluorine/nitrogen mixtures create barrier properties or alter surface activation of the treated plastic surfaces. We supply 10% and 20% F2/N2 fluorine nitrogen gas mixtures in individual cylinders and bulk tube trailers globally. Our expert technical service…

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Tungsten Hexafluoride Semiconductor Tungsten Hexafluoride (WF6), Semiconductor grade (99.9%), is a toxic, corrosive, odorless, liquefied gas.

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Trimethylsilane 3MS Semiconductor Semiconductor Grade Trimethylsilane (99.995%) is our standard high-purity offering for Low-k semiconductor applications. Trimethylsilane is a colorless, odorless, and highly-flammable gas.

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Tungsten Hexafluoride Megaclass Tungsten Hexafluoride (WF6), Megaclass grade (99.9995%), is our highest purity grade for silicon semiconductor metallization process applications, offering full metals analysis. Tungsten Hexafluoride is a toxic, corrosive, odorless, liquefied gas.

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Yttrium Precursors Our Yttrium (Y) oxide precursor is used in the High K dielectrics process as capping layers on other High K films, such as HfO2, or as stabilizers of crystalline forms of High K dielectrics, such as ZrO2.

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Tetramethylsilane 4MS EXTREMA Tetramethylsilane (4MS) is a precursor for depositing carbon doped silicon films and silicon carbide-like films.

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Titanium Precursors We offer Titanium Precursors for Thin Film Deposition of High K and Ultra High K dielectric films. These closely related compounds allow you to tailor the precursor to suit your processing requirements by selecting for properties such as Thin Film Deposition temperature, Thin Film Deposition rate, vapor pressure, etc. These precursors represent a technological advance over conventional precursors, such as…

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Titanium Tetrachloride TiCl4 Titanium Tetrachloride (TiCl4) is a liquid source material for the chemical vapor Thin Film Deposition (CVD) of titanium nitride, titanium dioxide and titanium metal.

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