Tetramethylsilane (4MS) is a precursor for depositing carbon doped silicon films and silicon carbide-like films.
- Dielectrics
- Low-k Dielectrics
- US
- Korea
- China
- Taiwan
- Japan
- Europe
- Semiconductors
- Logic
- Memory (DRAM, NAND, 3D NAND)
Tetramethylsilane (4MS) is a precursor for depositing carbon doped silicon films and silicon carbide-like films.
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