BTBAS Bis(tertiary-butylamino)silane EXTREMA® is a precursor for depositing silicon nitride and silicon oxide films at lower temperatures.
- Deposition
- Spacer Patterning
- Spacer Patterning
- Dielectrics
- Global
- US
- Korea
- China
- Taiwan
- Japan
- Europe
- Semiconductors
- Logic
- Memory (DRAM, NAND, 3D NAND)
- Sensors (MEMS, Optoelectronics)
- Advanced Packaging