Diethoxymethylsilane

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Diethoxymethylsilane (DEMS®) Precursor is used as a silicon source for the chemical vapor deposition of high quality low constant films and silicon dioxide films.

Category:
  • Low-k Dielectrics
Locations:
  • US
  • Korea
  • China
  • Taiwan
  • Japan
  • Europe
Industry:
  • Semiconductors
  • Logic
  • Memory (DRAM, NAND, 3D NAND)

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Description

Diethoxymethylsilane (DEMS®) Precursor is used as a silicon source for the chemical vapor deposition of high quality low constant films and silicon dioxide films. When used in the PDEMS® ILD process, it can be used to deposit ultra-low k films with k -2.5 and below.

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