ACT® NE-111 Etch Residue Remover

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ACT® NE-111 etch residue remover is a buffered, pH stable fluoride containing stripper specifically formulated for removal of highly oxidized etch residues while reducing surface metal contamination.

Category:
  • Al IC Cleans
Locations:
  • US
  • Korea
  • China
  • Taiwan
  • Japan
  • Europe
Industry:
  • Semiconductors
Brands:
  • ACT®

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Product info

Description

ACT® NE-111 etch residue remover is a buffered, pH stable fluoride containing stripper specifically formulated for removal of highly oxidized etch residues while reducing surface metal contamination. This product can be used in aluminum and copper applications.

Benefits of ACT® NE-111

  • Low etch rates on most sensitive metals
  • Process times: 5 to 20 minutes
  • Process temperatures: ambient to 40°C
  • Used in immersion, batch spray and single wafer solvent processors
  • Completely water-soluble; no intermediate rinse recommended
  • Compatible with many low-k films
  • Incorporates corrosion inhibitor
  • pH buffered for process stability
  • No SARA Title III reportables

Typical physical properties

ACT® NE-111  
Specific Gravity @ 25°C:1.005
Boiling Point:100°C
Freezing Point:<-20°C
Flash Point (COC):> 110°C
Viscosity @ 25°C:4.5 cSt
pH (5% solution):4.6

Applications

ACT® NE-111 is suitable for use in:

  • Post-etch residue cleaning on Cu, Al, Ti, W and alloys
  • Low-damage cleaning for sensitive metal stacks
  • Compatible with porous low-k films (e.g. SiLK, Coral, GX-3)
  • Works in fab-wide solvent processors
  • Etch rates remain stable even with up to 25% water dilution 
ACT NE-111

Residue Removal Performance

The scanning electron microscope (SEM) images below show patterned wafers before and after treatment with ACT® NE 111. Post-etch residues and surface contaminants are effectively removed, leaving clean, well-defined structures.

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