PDMAT – Pentakis(dimethylamino)tantalum

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Pentakis(dimethylamino) tantalum, PDMAT is a soild tantalum precursor for TaN barrier layers to prevent copper diffusion in semiconductor application.

Category:
  • Metal Nitrides
  • Metals
  • Metal Hardmasks
  • Deposition - Metal Hardmask
Locations:
  • US
  • Korea
  • China
  • Taiwan
  • Japan
  • Europe
Industry:
  • Semiconductors
  • Logic
  • Memory (DRAM, NAND, 3D NAND)

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Product Info

Description

Pentakis(dimethylamino)tantalum (PDMAT) is a solid, high-purity tantalum precursor engineered for TaN barrier layer deposition in Cu interconnects. Its excellent volatility and compatibility with various oxidizing and reducing agents make it a preferred choice for advanced ALD and CVD applications.

Benefits of PDMAT

  • Ideal for TaN barrier layers in Cu metallization stacks
  • Suitable for high-k Ta₂O₅ film deposition
  • High volatility and thermal stability for CVD/ALD
  • Supports bubbler-based and liquid injection delivery
  • Available in highly purified, low-metal format
  • Demonstrated compatibility with NH₃ or H₂O/O₂ reactants

Typical physical properties

PDMAT  
Formula Weight:401.35
Boiling Point:90°C @ 0.8 mmHg (sub)
Melting Point:150-180°C (dec)
Density:1.252 g/ml
V.P. Equation:Log10P(mmHg) = 11.30 - 4125/T(K)
Appearance:Pale yellow solid

Applications

PDMAT is suitable for use in:

  • ALD/CVD of TaN for Cu diffusion barriers
  • Dielectric deposition of tantalum pentoxide (Ta₂O₅)
  • Suitable for advanced logic BEOL and memory stacks
  • Applicable in immersion, showerhead, and batch tools
  • Enables integration in sub-10 nm interconnect technologies

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