AVS 26th International Conference on Atomic Layer Deposition (ALD 2026)

Name: AVS 26th International Conference on Atomic Layer Deposition (ALD 2026)
Start: 2026-06-28T00:01:00.000+09:00
End: 2026-07-01T23:59:00.000+09:00

This event is organized by the Association for Science and Technology Materials, Interfaces and Processing (AVS).

Type of Event

Other
Our Participation

Sponsor

28 Jun 2026 - 01 Jul 2026

Event Website

Tampa, Florida United States of America

Elevate ALD Innovations with Us

AVS ALD Welcome Reception – Sponsored by EMD Electronics
Sunday, June 28 from 18:00 to 20:00

Join us for drinks and stimulating conversations. All conference delegates are welcome to attend. Take the opportunity to get exclusive expert advice on-site.

Click here to connect

Overview

The AVS 26th International Conference on Atomic Layer Deposition (ALD 2026) featuring the 13th International Atomic Layer Etching Workshop (ALE 2026) will be a three-day meeting dedicated to the science and technology of atomic layer controlled deposition of thin films and atomic layer etching.

Schedule

Advance Your Knowledge With Our Leading Engineers

Rick Chen

Global Head of Integrated Customer Applications
Moderator:ALD Fundamentals: Growth and Characterization Session AF-MoA ALD Precursor Design I

29 Jun 2026 - FROM 16:00 TO 17:15 UTC-04:00
Haripin Chandra

Senior R&D Manager
Moderator: Enhancing Dielectric Properties of ALD Al-Doped HfO2 Films for Memory Applications: The Role of Homogeneous Aluminum Distribution

30 Jun 2026 - FROM 8:00 TO 12:00 UTC-04:00

Technical Leadership Presentations

Jan-Lucas Wree

R&D Scientist
Paper: AF-MoP-37 "Developments in low growth rate aluminum oxide ALD with AP-MDS™ 026 and AP-MDS™ 027"

29 Jun 2026 - FROM 17:45 TO 19:00 UTC-04:00
Taylor Hayes

Senior R&D Engineer
Paper: AF1-TuM-2 "Designing stable organosilane precursors for high quality silicon oxide"

30 Jun 2026 - FROM 8:15 TO 8:30 UTC-04:00
Nguyen Vu

Senior Scientist
Paper: AA-TuP-27 "Stable High-k Morphotropic Phase of HfZrO4 Using Uniformly Distributed Dopants"

30 Jun 2026 - FROM 17:45 TO 19:00 UTC-04:00
Son Hoang, Ph.D.

Materials Characterization Manager
Paper: AA1-WeM-4 "Enhancing Dielectric Properties of ALD Al-Doped HfO2 Films for Memory Applications: The Role of Homogeneous Aluminum Distribution"

01 Jul 2026
Jared McWilliams

Principal Scientist
Paper: AA1-WeM-5 "Germanium Doping for Electrical Modulation of Ferroelectric HZO Using Atomic Layer Deposition"

01 Jul 2026 - FROM 9:00 TO 9:15 UTC-04:00

Co-Authors

Bhushan Zopé, Xinjian Lei

Agnes Derecskei, Ron Pearlstein, Haripin Chandra
Paper: AF1-WeM-6 "Effect of Initial Surface Silanol Density and Aminosilane Structure on O2 Plasma-Assisted ALD of SiO2" Presenter: Andrew Kaye (Graduate Student), Colorado School of Mines

01 Jul 2026 - FROM 9:15 TO 9:30 UTC-04:00

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