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AVS 26th International Conference on Atomic Layer Deposition (ALD 2026)
This event is organized by the Association for Science and Technology Materials, Interfaces and Processing (AVS).
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Type of Event
Other
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Our Participation
Sponsor
Elevate ALD Innovations with Us
- AVS ALD Welcome Reception – Sponsored by EMD Electronics
- Sunday, June 28 from 18:00 to 20:00
Join us for drinks and stimulating conversations. All conference delegates are welcome to attend. Take the opportunity to get exclusive expert advice on-site.
Overview
The AVS 26th International Conference on Atomic Layer Deposition (ALD 2026) featuring the 13th International Atomic Layer Etching Workshop (ALE 2026) will be a three-day meeting dedicated to the science and technology of atomic layer controlled deposition of thin films and atomic layer etching.
Advance Your Knowledge With Our Leading Engineers
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Rick Chen
Global Head of Integrated Customer Applications
Moderator:ALD Fundamentals: Growth and Characterization Session AF-MoA ALD Precursor Design I
29 Jun 2026 - FROM 16:00 TO 17:15 UTC-04:00
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Haripin Chandra
Senior R&D Manager
Moderator: Enhancing Dielectric Properties of ALD Al-Doped HfO2 Films for Memory Applications: The Role of Homogeneous Aluminum Distribution
30 Jun 2026 - FROM 8:00 TO 12:00 UTC-04:00
Technical Leadership Presentations
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Jan-Lucas Wree
R&D Scientist
Paper: AF-MoP-37 "Developments in low growth rate aluminum oxide ALD with AP-MDS™ 026 and AP-MDS™ 027"
29 Jun 2026 - FROM 17:45 TO 19:00 UTC-04:00
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Taylor Hayes
Senior R&D Engineer
Paper: AF1-TuM-2 "Designing stable organosilane precursors for high quality silicon oxide"
30 Jun 2026 - FROM 8:15 TO 8:30 UTC-04:00
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Nguyen Vu
Senior Scientist
Paper: AA-TuP-27 "Stable High-k Morphotropic Phase of HfZrO4 Using Uniformly Distributed Dopants"
30 Jun 2026 - FROM 17:45 TO 19:00 UTC-04:00
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Son Hoang, Ph.D.
Materials Characterization Manager
Paper: AA1-WeM-4 "Enhancing Dielectric Properties of ALD Al-Doped HfO2 Films for Memory Applications: The Role of Homogeneous Aluminum Distribution"
01 Jul 2026
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Jared McWilliams
Principal Scientist
Paper: AA1-WeM-5 "Germanium Doping for Electrical Modulation of Ferroelectric HZO Using Atomic Layer Deposition"
01 Jul 2026 - FROM 9:00 TO 9:15 UTC-04:00
Co-Authors
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Bhushan Zopé, Xinjian Lei
Agnes Derecskei, Ron Pearlstein, Haripin Chandra
Paper: AF1-WeM-6 "Effect of Initial Surface Silanol Density and Aminosilane Structure on O2 Plasma-Assisted ALD of SiO2" Presenter: Andrew Kaye (Graduate Student), Colorado School of Mines
01 Jul 2026 - FROM 9:15 TO 9:30 UTC-04:00
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Materials Matter
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