Semiconductor Materials Webinar Series

This webinar is the third webinar in a series exploring pressing topics on materials and semiconductor development. We will discuss how EUV tooling requires a radically different design resulting in a source photon deficiency of approximately 90% compared to its processor, 193nm immersion lithography. This source limitation leads to new scaling barriers, including:

• CD variance, or line-width roughness, is difficult to mitigate and has severe yield implications. 
• Source power limitations have a direct effect on throughput, resulting in a productivity challenge.
• Market factors such as high-consumer demand for semiconductors combined with the DRAM supplier's imminent need for EUV tooling.

In this webinar, you will learn how Directed Self-Assembly (DSA) technology and its material development can solve many of these limitations. The complex molecular assembly of DSA will be explained, and we will walk through the steps of how it can be integrated into an advanced patterning process. In addition, the CD variance limitations of EUV will be compared to the variance derived from a DSA process, and we will evaluate its unique solution to accommodate the EUV photon limitation.