TDEAZr is typically used for zirconium oxide ALD or PE-ALD depositions.
- High-k
- Metal Oxides
- US
- Korea
- China
- Taiwan
- Japan
- Europe
- Semiconductors
- Logic
- Memory (DRAM, NAND, 3D NAND)
TDEAZr is typically used for zirconium oxide ALD or PE-ALD depositions.
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