The Next Revolution in Semiconductor Processing: Atomic Layer Etching

LOW-K INTERMETAL DIELECTRICS

By Robert Ridgeway, Senior R&D Manager, Product discovery, Versum Materials, EMD Electronics

Low-k Intermetal Dielectrics (ILD) have evolved from dense, single precursor based oxides to porous, structural and porogen based Low-k films. This blog discusses about the needs, challenges and our new precursor innovation in developing a successful ILD process for next-generation devices.

02 Nov 2021

SELECTING A GASGUARD SYSTEM FOR CONTROLLING HEATED SPECIALTY GASES

We recommend our new GASGUARD eV Temperature Control System! This blog reveals features and benefits of our new Temperature Control System.

02 Nov 2021

WORKING WITH CUSTOMERS TO DEVELOP NEW MOLECULES

By Anu Mallikarjunan, Global Marketing Manager, Planarization Global Business, EMD Electronics

As a leading innovation-driven electronic material supplier, we are committed to stretching the boundaries of science and technology in the semiconductor industry. In this blog, Anupama discusses the challenges we accepted, the steps we took, and the promising molecules we developed!

02 Nov 2021

ALD in Confined Spaces

In 3D vertical memory, active and electrode materials are layered inside deep vias with aspect ratios greater than 40:1. In previous posts, we’ve talked about how atomic layer deposition (ALD), a layer-by-layer, self-saturating chemical deposition process, can fill these types of structures.

14 Jan 2020

Leakage Variation with Aspect Ratio in ALD High-k ZrO2 Dielectrics

By Martin McBriarty, Scientific Manager, Intermolecular, EMD electronics

This blog summarizes the presentation given by Dr. Martin McBriarty on Atomic Layer Deposition in high-aspect-ratio-spaces, exploring how a material’s properties may change as the material goes into deep features and how we use a high-aspect ratio (HAR) test vehicle to investigate this behavior.

02 Nov 2021

Accelerating Analog AI R&D for Neuromorphic Computing Takes Intelligence

By Ganesh Panaman, Head of Intermolecular​, EMD electronics

While artificial intelligence (AI) algorithms can be embedded in digital vonNeumann ICs, excessive size and energy consumption represents a significant barrier to the widespread adoption of such neuromorphic AI chips both at the “edge” and in the “cloud”.

11 Dec 2020

Industry’s First 4-Element ALD Chalcogenide-based OTS for 3D Memory Arrays

By Mario Laudato, Technical Manager, Intermolecular, EMD electronics

The semiconductor industry has been exploring the use of 3D crosspoint memory for years.

19 Aug 2020

Shedding new light onto the structure of ferroelectric hafnium oxide films

By Vijay Narasimhan, Manager, Early R&D & Incubator Programs, Intermolecular, EMD Electronics

Recently we discovered the presence of a transient crystal structure in hafnium oxide that forms just as it is heated above its crystallization temperature. We were able to “trap” this likely ferroelectric structure before it disappeared to make high performing ferroelectric capacitor.

02 Nov 2021

ASSAY MEANS PURITY, RIGHT?

By Suhas Ketkar, Head of Global Analytical Technology, EMD Electronics

Appropriate Examination of purity (assay) of a chemical is one of the major checkpoint in buyer-supplier relationship. In this blog, Dr. Suhas Ketkar reveals what is to 'assay' and how it is carried out for Organosilane and organometallic chemicals, also, the challenges in examining the purity.

02 Nov 2021