Lithography Process
The graphic explains the lithography process with negative and positive tone photoresists.
Photoresists
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Core resists
We offer BB\X-over, g-line/i-line photoresists for front-end submicron lithography processes.Dive deeper -
KrF Thick film resists
KrF thick film resists perform high sensitivity and high resolution with excellent pattern profile.Dive deeper -
Lift off resists
AZ® nLOF™ and pLOF™ are i-line photoresist series that simplify complex image reversal and multilayer lift-off litho processes.Dive deeper -
Thick film resists
TFR enables manufacturing of patterned conductive circuitry.Dive deeper
Process materials
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Developers
AZ developers are high contrast, ultra-high purity, and formulated for a wide range of lithography applications.Dive deeper -
EBRs
AZ edge bead removers are high purity, effective, low cost solvents designed for photoresist edge bead removal.Dive deeper
Patterning Enhancement Materials
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TARC
Top Antireflective Coating (TARC) is a cost-effective solution for reflectivity control.Dive deeper -
BARC
Bottom Antireflective Coating (BARC) provides a comprehensive solution for reflectivity control.Dive deeper -
Shrink
Chemical shrink is a post-resist-patterning process that can shrink trench or contact hole patterns.Dive deeper -
ArF Rinse
Industry standard brought through our collaboration with TEL.Dive deeper -
SoC
Spin-on carbon materials provide high transparency for improved overlay control, high throughput & high thermal stability.Dive deeper
EUV Materials
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DSA
Directed Self-assembly (DSA) is a complimentary patterning technique that improves the CD variance of an existing pattern.Dive deeper -
EUV Rinse
A product applied to EUV process brought through our collaboration with TEL.Dive deeper
Find the right material
Our experts can help you find the right materials for your needs