Patterning Enhancement Materials
There are two coatings in the Patterning Enhancement Materials (PEM) family:
TARCs - Top Antireflective Coatings
TARCS are the industry standards as cost-effective solutions for reflectivity control in applications from i-line to ArF lithography. The straightforward process also adds values for improvement on resist performance by providing a capping layer to prevent contaminations.
BARCs - Bottom Antireflective Coatings
These provide a comprehensive solution for reflectivity control. The materials pose low-outgassing, reduced defective and etch rates based on proprietary polymer platforms.
Chemical shrink and rinse
Chemical shrink is a post-resist-patterning process. Combining effects of physical and chemical interactions with photoresists sidewalls, a layer with reduced water solubility is formed. Post simple water rinse to remove excessive materials, the trench or hole pattern is shrunk to a smaller dimension. The volume of shrinkage is process controlled during standard bake temperatures.
Rinse chemical is another industry standard brought through our collaboration with TEL. By replacing deionized water with rinse chemical, resist pattern collapse could be significantly improved. The process helps customers expand process window and enable higher resolution. Some additional benefits include defective reduction and potentially LER/LWR improvement.